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STMicroelectronics Bipolar Transistor NPN 16 A 700 V Surface Mount TO-263 3-Pin STB13007DT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.85mm |
| Length | 10.4mm |
| Model | STB13007DT4 |
| Width | 4.6mm |
| Mount Type | Surface |
| Series | STB13007DT4 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 700V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Power Dissipation Pd | 80W |
| Maximum DC Collector Current Idc | 16A |
| Transistor Configuration | Single |
| Improved specification | Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range |
Key Features
- The transistor features a maximum DC collector current of 16 A.
- It has a maximum collector emitter voltage rating of 700 V.
- Surface mount TO-263 package with 3 pins for ease of PCB assembly.
- Designed with a cellular emitter structure for enhanced switching speed.
- Includes an integrated free-wheeling diode for improved performance.
- Maximum power dissipation is rated at 80 W.
- Operating temperature range is from -65°C to 150°C.
- Minimum DC current gain hFE of 25 ensures reliable amplification.
Product Description
STMicroelectronics STB13007DT4 is a bipolar NPN transistor designed to handle high current and voltage requirements in demanding electronic circuits. Its 16 A maximum collector current and 700 V maximum collector-emitter voltage ratings make this device ideal for power switching applications.
The transistor is manufactured using high voltage Multi-Epitaxial Planar technology which enables high switching speeds and medium voltage capability. The cellular emitter structure further enhances the switching speeds, reducing losses and increasing efficiency.
Encapsulated in a 3-pin TO-263 surface mount package, the STB13007DT4 is suitable for compact PCB designs and automated assembly processes. Its integrated free-wheeling diode protects the transistor in inductive load switching scenarios.
With a maximum power dissipation of 80 W and an operating temperature range from -65°C to 150°C, this transistor offers robust performance in a wide variety of industrial, electronic transformer, and switch mode power supply applications.
Other electrical characteristics include a minimum DC current gain of 25, maximum emitter base voltage of 9 V, and stable performance across a broad temperature range. Package dimensions are 10.4 mm x 4.6 mm x 15.85 mm (L x W x H), allowing for reliable mechanical and thermal integration into electronic assemblies.
The device provides improved specifications including lower leakage current and tighter gain ranges for consistent quality. It features a minimum lot-to-lot spread ensuring reliable and repeatable operation. The integrated free-wheeling diode improves overall device robustness in switching applications.
The STB13007DT4 transistor is commonly used in electronic transformers for halogen lamps, switch mode power supplies, and other power electronics requiring a high-voltage, high-current transistor.
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Frequently Asked Questions
The maximum DC collector current rating of the STB13007DT4 is 16 A.
This transistor has a maximum collector-emitter voltage rating of 700 V.
The maximum power dissipation for this model is rated at 80 W.
The package dimensions are 10.4 mm in length, 4.6 mm in width, and 15.85 mm in height.
The operating temperature range for the STB13007DT4 is from -65°C to 150°C.
Yes, it includes an integrated free-wheeling diode for improved performance in inductive load switching scenarios.
The minimum DC current gain (hFE) for the STB13007DT4 is 25.
It is an NPN bipolar transistor designed for high current and voltage applications.
This model uses a surface mount type (TO-263) for ease of PCB assembly.
It is commonly used in electronic transformers for halogen lamps, switch mode power supplies, and other power electronics requiring high-voltage, high-current capabilities.
It features lower leakage current, tighter gain ranges, and a minimum lot-to-lot spread for consistent quality.
The maximum emitter-base voltage (VEBO) for the STB13007DT4 is 9 V.
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