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STMicroelectronics Bipolar Transistor 20 A NPN, 80 V, 3-Pin TO-263 MJB44H11T4-A
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.85mm |
| Length | 10.4mm |
| Model | MJB44H11T4-A |
| Width | 4.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | 20A |
| Transistor Configuration | Single |
Key Features
- Features a TO-263 3-pin surface mount package for compact design.
- Supports a maximum power dissipation of 50 W ensuring efficient heat management.
- Designed for switching and amplifier applications with a minimum DC current gain of 40.
- Operates reliably over a temperature range from -55°C to 150°C.
- Meets the automotive AEC-Q101 standard for enhanced reliability in automotive electronics.
- Configured as a single transistor with an NPN polarity, suitable for high current circuits.
- Pin count of 3 enables standard interfacing and easy mounting on PCB surfaces.
- Maximum emitter base voltage of 5 V ensures robust performance in demanding environments.
Product Description
STMicroelectronics MJB44H11T4-A is a bipolar transistor designed for industrial and automotive applications requiring robust power switching and amplification.
This NPN transistor supports a maximum DC collector current of 20 A and collector-emitter voltage up to 80 V, housed in a TO-263 surface mount package facilitating space-saving designs.
With a power dissipation capacity of 50 W, it effectively handles thermal loads encountered in power management systems and switching circuits. The device's minimum DC current gain of 40 provides reliable amplification in various electronic circuits.
Operational temperature ranges from -55°C to 150°C, allowing functionality in harsh environments and automotive settings. Compliance with AEC-Q101 automotive standard certifies its suitability for vehicle electronics.
The transistor configuration is single, with a 3-pin layout optimizing interface simplicity on printed circuit boards. Its maximum emitter base voltage rating of 5 V, combined with internal features such as latch and PWM protection, enhances device stability during pulse operations.
Typical applications include power amplifiers, switching circuits in industrial control systems, and automotive electronic modules requiring high-current and high-voltage switching capabilities.
Features a TO-263 3-pin surface mount package for compact design. Supports a maximum power dissipation of 50 W ensuring efficient heat management. Designed for switching and amplifier applications with a minimum DC current gain of 40.
Operates reliably over a temperature range from -55°C to 150°C. Meets the automotive AEC-Q101 standard for enhanced reliability in automotive electronics. Configured as a single transistor with an NPN polarity, suitable for high current circuits.
Pin count of 3 enables standard interfacing and easy mounting on PCB surfaces. Maximum emitter base voltage of 5 V ensures robust performance in demanding environments. Explore more discrete semiconductor components like Bipolar Transistors in the Electronics and Electricals section of EnvMart for comprehensive industrial-grade solutions.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) for this transistor is 80 V.
This model can handle a maximum DC collector current of 20 A.
The maximum power dissipation capacity of the MJB44H11T4-A is 50 W.
It operates reliably over a temperature range from -55°C to 150°C.
This model has a pin count of 3 and is housed in a TO-263 surface mount package.
The minimum DC current gain (hFE) for this transistor is 40.
Yes, it meets the automotive AEC-Q101 standard for enhanced reliability in automotive electronics.
The maximum emitter base voltage (VEBO) rating for this transistor is 5 V.
It is designed for switching and amplifier applications, particularly in industrial control systems and automotive electronic modules.
The dimensions of the MJB44H11T4-A are 15.85 mm in height, 10.4 mm in length, and 4.6 mm in width.
It is configured as a single NPN transistor, suitable for high current circuits.
This transistor supports surface mounting, facilitating easy installation on PCB surfaces.
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