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STMicroelectronics Bipolar Transistor NPN 10 A 50 V 4-Pin SOT-223 2STN1550

Category Bipolar Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.8mm
Length 6.7mm
Model 2STN1550
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Power Dissipation Pd 1.4W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Constructed with Power bipolar high current density technology for superior gain and low saturation voltage.
  • Features very low collector-emitter saturation voltage for efficient operation.
  • Designed for fast switching speed suitable for various electronic applications.
  • Exhibits high current gain with a minimum DC current gain (hFE) of 100.
  • Capable of dissipating up to 1.4 W of power in surface mount SOT-223 package.
  • Wide operating temperature range from -65°C to 150°C for reliable performance.
  • Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height.
  • Includes 4 pins to facilitate mount and circuit integration.

Product Description

STMicroelectronics 2STN1550 Bipolar Transistor is a robust NPN transistor manufactured using advanced Power bipolar high current density technology. It enables exceptional high gain performance and very low saturation voltage, ensuring efficient power handling and fast switching in electronic circuits.

This transistor supports a maximum DC collector current of 10 A and a maximum collector emitter voltage of 50 V, making it suitable for medium power electronic applications. Its package is the compact 4-pin SOT-223 surface mount type, facilitating a small footprint on PCB assemblies.

The device is designed to dissipate power up to 1.4 W and can operate reliably in a wide temperature range from -65°C to 150°C. The minimum DC current gain (hFE) is 100, providing high gain characteristics with very low collector-emitter saturation voltage for efficient switching.

Physical dimensions are 6.7 mm length, 3.7 mm width, and 1.8 mm height, making it suitable for surface mounting in compact electronic devices.

This transistor is commonly employed in applications such as emergency lighting circuits, LED drivers, motherboard and hard disk drive electronics, mobile communication equipment, battery chargers, and voltage regulation systems.

Constructed with Power bipolar high current density technology for superior gain and low saturation voltage. Features very low collector-emitter saturation voltage for efficient operation. Designed for fast switching speed suitable for various electronic applications.

Exhibits high current gain with a minimum DC current gain (hFE) of 100. Capable of dissipating up to 1.4 W of power in surface mount SOT-223 package. Wide operating temperature range from -65°C to 150°C for reliable performance.

Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height. Includes 4 pins to facilitate mount and circuit integration. Applications include emergency lighting, LED drivers, motherboards, mobile equipment, battery chargers, and voltage regulators.

This STMicroelectronics transistor is ideal for use in industrial, automotive electronics (non-certified), commercial electronics, and laboratory electronic prototyping. It is a reliable choice for professionals seeking efficient and high-gain power transistors for various electronic control and switching systems.

Explore more Bipolar Transistors and discrete semiconductors in the Electronics & Electricals category at EnvMart.

STMicroelectronics Bipolar Transistor NPN 10 A 50 V 4-Pin SOT-223 2STN1550
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Frequently Asked Questions

The maximum DC collector current for this NPN transistor is 10 A.

It can dissipate up to 1.4 W of power in its surface mount SOT-223 package.

The transistor operates reliably within a temperature range of -65°C to 150°C.

The dimensions of this model are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.

The minimum DC current gain (hFE) is 100, providing high gain characteristics.

This model uses a 4-pin SOT-223 surface mount package.

The maximum collector-emitter voltage (Vceo) is 50 V.

The maximum emitter-base voltage (VEBO) is 5 V.

It is commonly used in emergency lighting circuits, LED drivers, motherboards, mobile communication equipment, battery chargers, and voltage regulation systems.

The maximum transition frequency (ft) is 1 MHz.

This model has 4 pins to facilitate mounting and circuit integration.

The 2STN1550 is configured as a single NPN transistor.

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