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STMicroelectronics High Voltage Fast Switching NPN Bipolar Transistor 8 A 450 V TO-220 BUL1102EFP
Specifications
| Country of Origin | multi epitaxial Planar technology. It |
|---|---|
| Brand | STMicroelectronics |
| Height | 30.6mm |
| Length | 10.4mm |
| Model | BUL1102EFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | BUL1102E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 450V |
| Minimum DC Current Gain hFE | 12 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 12V |
| Maximum Power Dissipation Pd | 70W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
Key Features
- Designed using multi epitaxial Planar technology with cellular emitter structure for enhanced switching speed.
- Intrinsic ruggedness enables high collector current during breakdown without Transil™ protection.
- Maximum power dissipation of 70 W ensures efficient thermal handling.
- Operates across a wide temperature range from -65°C to 150°C.
- Ideal for electronic lamp ballasts in 120 V push-pull and 277 V half-bridge configurations.
- Through-hole mounting facilitates easy PCB integration.
- Transistor polarity is NPN with a minimum current gain (hFE) of 12.
- Package dimensions are compact with length 10.4 mm, width 4.6 mm, and height 30.6 mm.
Product Description
STMicroelectronics BUL1102EFP is a high voltage fast switching NPN bipolar transistor manufactured using multi epitaxial Planar technology. This 3-pin TO-220 packaged transistor offers a maximum DC collector current of 8 A and a maximum collector emitter voltage of 450 V.
The device incorporates a cellular emitter structure with planar edge termination enhancing switching speeds and maintaining a wide ruggedness safe operating area (RBSOA). Owing to an increased intermediate layer, BUL1102EFP demonstrates intrinsic ruggedness to withstand high collector current during breakdown conditions without the need for additional Transil™ protection, typically required in lamp ballast converters.
Designed specifically for robust and high-performance applications, this transistor supports a maximum power dissipation of 70 W, operates reliably from -65°C up to 150°C, and has a minimum DC current gain (hFE) of 12. It comes in a through-hole mount TO-220 package with compact dimensions of 10.4 mm in length, 4.6 mm in width, and 30.6 mm in height.
BUL1102EFP's high voltage and fast switching capabilities make it ideal for electronic ballast applications including four-lamp ballasts operating at 120 V mains in push-pull configurations and 277 V mains in half-bridge current feed configurations.
Designed with multi epitaxial Planar technology for high-speed switching. Cellular emitter structure ensures enhanced ruggedness and breakdown tolerance. Suitable for lamp ballast electronic control circuits. Wide operating temperature range from -65°C to 150°C.
Through-hole TO-220 package for reliable mounting. Supports high collector current up to 8 A and voltage of 450 V. Compact dimensions enable flexible PCB design. Single NPN transistor with 3 pins.
This transistor is widely applicable in industrial electronics, HVAC systems, lighting control, and other power electronics requiring robust and reliable switching components. Explore more STMicroelectronics Bipolar Transistors at EnvMart for quality electronic components tailored for demanding applications.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) for this model is 450 V.
This transistor has a maximum DC collector current rating of 8 A.
It supports a maximum power dissipation of 70 W.
The operating temperature range is from -65°C to 150°C.
It comes in a TO-220 package type, suitable for through-hole mounting.
The minimum DC current gain (hFE) is 12.
The transistor polarity is NPN.
It is ideal for electronic ballast applications, including four-lamp ballasts in push-pull configurations and half-bridge current feed configurations.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 30.6 mm in height.
It is designed using multi epitaxial Planar technology with a cellular emitter structure for enhanced switching speed.
The maximum emitter base voltage (VEBO) is 12 V.
This model has 3 pins.
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