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STMicroelectronics Bipolar Transistor 30 A NPN, 350 V, Surface Mount TO-263 Package BUB941ZTT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.85mm |
| Length | 10.4mm |
| Model | BUB941ZTT4 |
| Width | 4.6mm |
| Mount Type | Surface |
| Series | BUB941ZT |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 350V |
| Minimum DC Current Gain hFE | 300 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Power Dissipation Pd | 150W |
| Maximum DC Collector Current Idc | 30A |
| Transistor Configuration | Common Emitter |
Key Features
- Capable of operating at a maximum collector emitter voltage of 350 volts.
- Designed for common emitter transistor configuration applications.
- Maximum power dissipation rating of 150 watts for high ruggedness.
- Built for temperature operation ranging from -65°C to 150°C.
- Includes 3 pins in a TO-263 surface mount power package for compact design.
- Minimum DC current gain is 300, ensuring efficient current amplification.
- Features a maximum emitter base voltage of 5 volts for stability.
- Designed without automotive standard approvals but suitable for rugged high power electronic ignitions.
Product Description
STMicroelectronics BUB941ZTT4 is a rugged bipolar transistor featuring a 30 A maximum DC collector current and NPN transistor polarity, housed in a 3-pin TO-263 surface mount package. This component supports a maximum collector emitter voltage of 350 V and has a high power dissipation capability of 150 W, making it suitable for demanding power electronic applications.
Engineered with a common emitter configuration, this transistor offers a minimum DC current gain (hFE) of 300 and a maximum emitter base voltage rating of 5 V. It is designed to operate reliably across a broad temperature range from -65°C up to 150°C, ensuring durability in harsh environments.
The physical dimensions of the device are compact, with a length of 10.4 mm, width of 4.6 mm, and height of 15.85 mm. The TO-263 package facilitates surface mounting on printed circuit boards, making it ideal for space-constrained designs.
Applications for the BUB941ZTT4 include high ruggedness electronic ignitions and other power switching uses where thermal stability and reliable high current handling are essential. While it lacks specific automotive standard certifications, its built-in clamping zeners enhance device protection under rugged conditions.
Capable of handling 30 A continuous collector current in NPN configuration. 350 V maximum collector emitter voltage rating for high voltage needs. Surface mount TO-263 package designed for easy PCB integration. Supports high power dissipation up to 150 W for thermal resilience.
Wide operating temperature range from -65°C to 150°C for harsh environments. Compact dimensions enable use in space-limited electronic circuits. Minimum current gain of 300 ensures effective switching performance. Includes built-in clamping zeners for ruggedness.
This STMicroelectronics Bipolar Transistor is an ideal choice for industrial, telecommunications, power supply, and consumer electronics applications where robust, high-current, high-voltage switching components are required.
Explore more STMicroelectronics power semiconductors and discrete electronic components on EnvMart to find the best fit for your design and manufacturing requirements.
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Frequently Asked Questions
The maximum collector emitter voltage rating of this transistor is 350 V.
This model can handle a maximum DC collector current of 30 A.
The maximum power dissipation rating is 150 W, allowing for high power applications.
It operates reliably across a temperature range from -65°C to 150°C.
The TO-263 package includes 3 pins.
The minimum DC current gain (hFE) is 300, ensuring effective current amplification.
The maximum emitter base voltage (VEBO) rating is 5 V.
This transistor is designed for a common emitter configuration.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 15.85 mm in height.
It is suitable for high ruggedness electronic ignitions and other power switching applications.
Yes, it is housed in a TO-263 surface mount package for easy PCB integration.
The country of origin for this transistor is India.
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