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STMicroelectronics Bipolar Transistor PNP 10 A -50 V 4-Pin SOT-89 2STF2550
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | 2STF2550 |
| Width | 2.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 80 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Power Dissipation Pd | 1.4W |
| Maximum DC Collector Current Idc | -10A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Constructed using PB-HCD technology for high current density and excellent gain.
- Features a surface mount 4-pin SOT-89 package suitable for compact PCB designs.
- Offers low collector-emitter saturation voltage for efficient switching.
- Maximum power dissipation of 1.4 W enables medium power applications.
- Wide operating temperature range from -65°C to 150°C ensures reliability in harsh environments.
- Provides fast switching speed ideal for emergency lighting and LED circuits.
- Typical minimum DC current gain of 80 enhances amplifier performance.
- Applications include motherboard, hard disk drive, voltage regulation, battery chargers, and mobile equipment.
Product Description
STMicroelectronics 2STF2550 Bipolar Transistor is a PNP transistor manufactured utilizing advanced PB-HCD technology, delivering exceptional high current gain combined with low saturation voltage. Rated for a maximum collector current of 10 A and a collector-emitter voltage of -50 V, this transistor is designed for surface mounting using a 4-pin SOT-89 package, supporting compact and efficient circuit integration.
The transistor offers a maximum power dissipation of 1.4 W and can reliably operate over an extensive temperature range from -65°C to 150°C, making it suitable for applications in demanding industrial, automotive, and commercial environments. Its high transition frequency of 1 MHz and fast switching capabilities make it ideal for use in LED drivers, emergency lighting, mobile equipment, and voltage regulation circuits.
The 2STF2550’s low collector-emitter saturation voltage ensures minimal power loss, enhancing energy efficiency in power management setups. With a minimum DC current gain of 80, it ensures strong amplification performance for various electronic circuits.
Constructed using PB-HCD technology for high current density and low saturation voltage. Surface mount device in compact 4-pin SOT-89 package enables space-saving PCB designs. Wide operating temperature range from -65°C to 150°C for reliable performance.
Suitable for industrial, automotive, LED lighting, motherboard, and battery charging applications. Fast switching frequency of 1 MHz for efficient high-speed operation. Maximum power dissipation of 1.4 W supports medium power applications.
Low emitter-base voltage rating of -5 V for device protection. Pin count of 4 ensures stable electrical connectivity. Compact dimensions of 4.6 mm length, 2.6 mm width, and 1.6 mm height. Optimized for emergency lighting, LED drivers, voltage regulation, and mobile devices.
Explore the Electronics & Electricals category at EnvMart for a wide range of discrete semiconductors and Bipolar Transistors suitable for your industrial, commercial, and laboratory electronics projects. Choose STMicroelectronics 2STF2550 for reliable and efficient transistor performance.
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Frequently Asked Questions
The maximum collector current rating of the 2STF2550 is -10 A.
This transistor operates within a temperature range of -65°C to 150°C.
The 2STF2550 is packaged in a 4-pin SOT-89 surface mount configuration.
The maximum power dissipation for the 2STF2550 is 1.4 W.
The minimum DC current gain (hFE) of the 2STF2550 is 80.
The maximum collector-emitter voltage (Vceo) for the 2STF2550 is -50 V.
The dimensions of this transistor are 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height.
The maximum transition frequency (ft) of the 2STF2550 is 1 MHz.
This transistor is suitable for applications such as LED drivers, emergency lighting, voltage regulation, and mobile equipment.
The maximum emitter-base voltage (VEBO) rating for the 2STF2550 is -5 V.
The 2STF2550 is constructed using PB-HCD technology, which provides high current density and low saturation voltage.
The 2STF2550 features a single PNP transistor configuration.
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