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| Country of Origin | United States |
|---|---|
| Diameter | 13.97mm |
| Brand | OSI Optoelectronics |
| Height | 0.17in |
| Length | 8mm |
| Model | OSD60-5T |
| Packaging | Tape & Reel |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | OSD |
| Maximum Operating Temperature | 85°C |
| Package Type | TO-8 |
| Minimum Operating Temperature | -25°C |
| Polarity | Reverse |
| Dark Current | 1nA |
| Standards/Approvals | RoHS |
| Number of Pins | 3 |
| Typical Rise Time | 30μs |
| Typical Fall Time | 0.6ns |
| Wavelength of Peak Sensitivity | 436nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 30V |
| Minimum Wavelength Detected | 350nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 65 ° |
| OSI Optoelectronics OSD60-5T Infrared Photodiode, 65 °, Through Hole TO-8Brand | OSI Optoelectronics |
OSI Optoelectronics OSD60-5T infrared photodiode is a high-performance photoconductive detector engineered for industrial, laboratory, and communications applications. Featuring a spectral sensitivity range from 350nm to 1100nm, it is optimized for visible and near-infrared light detection, ideal for pulse detectors, optical communications, barcode readers, optical remote controls, medical equipment, and high-speed photometry.
The photodiode is housed in a through hole TO-8 package with precise dimensions, a diameter of 13.97 mm, height of 0.17 inches, length of 8 mm, and width of 5 mm. It achieves high-speed response with a typical rise time of 30μs and fall time of 0.6ns when reverse biased up to 30 volts, improving capacitance and speed.
Designed for reverse polarity operation, the device has a low dark current of 1nA, minimizing noise, and ensures reliability across a temperature range from -25°C to 85°C. The device is supplied in tape & reel packaging to facilitate automated manufacturing processes.
This photodiode complies with RoHS standards, certifying its environmental and safety compliance. It is manufactured in the United States, reflecting high-quality production standards.
The photodiode detects infrared spectrum from 350 to 1100nm effectively. It has a peak sensitivity wavelength at 436nm for optimal performance. Package type is through hole TO-8 with tape & reel packaging. Includes 3 pins for mounting and electrical connection.
Operating temperature range is from -25°C to 85°C suitable for diverse environments. Features low dark current of 1nA to reduce noise in measurements. Maximum breakdown voltage is limited to 30V to prevent damage. Typical response times enable high-speed applications with 30μs rise time and 0.6ns fall time.
This OSI Optoelectronics OSD60-5T photodiode is suited for precision detection tasks in industrial automation, scientific instrumentation, medical devices, and communication systems. Its robust package and performance characteristics make it ideal for advanced optical sensing applications.
Explore our Electronics Components and Photodiode selections at EnvMart for a wide range of optoelectronic solutions.
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