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ROHM Power N-Channel MOSFET 2.5A 20V 3-Pin SOT-323 Surface Mount Enhancement Mode RUF025N02TL
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | ROHM |
| Height | 820μm |
| Length | 2.1mm |
| Model | RUF025N02TL |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RUF025N02 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-323 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 800mW |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features low ON-resistance suitable for a wide range of electronic applications.
- Supports maximum continuous drain current of 2.5 amperes.
- Operates with maximum drain-source voltage of 20 volts.
- Compact SOT-323 3-pin package designed for surface mounting.
- Enhancement mode channel with N-type channel type.
- Maximum power dissipation rating of 800 milliwatts for reliable operation.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Typical gate charge of 5 nanocoulombs enables fast switching.
Product Description
ROHM RUF025N02TL is a high-performance N-Channel Power MOSFET in a compact SOT-323 package measuring 2.1 mm by 1.8 mm and height of 820 μm. It features a maximum continuous drain current of 2.5 A and withstands drain-source voltages up to 20 V. The device utilizes enhancement mode operation and offers low ON-resistance, making it highly suitable for efficient power switching in electronic circuits.
This surface mount MOSFET is designed for industrial, consumer electronics, and power management applications requiring compact, reliable switching components. It operates effectively within a broad temperature range from -55°C to 150°C, ensuring durability in demanding environments.
The MOSFET has a maximum power dissipation rating of 800 mW and a typical gate charge of 5 nC at Vgs, enabling fast switching speeds and energy-efficient operation. The forward voltage drop is rated at 1.2 V, contributing to the device’s electrical efficiency.
The 3-pin SOT-323 packaging facilitates compact PCB layouts and surface mount assembly processes. Low ON-resistance for high efficiency. Max drain current of 2.5 A suitable for moderate power applications. Wide operating temperature range ensures robustness.
Compact SOT-323 surface mount package enables space-saving designs. Enhancement mode gate for precise control. Explore EnvMart’s extensive range of semiconductor components for industrial and electronic projects with guaranteed quality and reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.5 amperes.
It can withstand a maximum drain-source voltage of 20 volts.
This MOSFET comes in a compact SOT-323 package.
It operates effectively within a temperature range from -55°C to 150°C.
The height of this model is 820 micrometers.
The typical gate charge is 5 nanocoulombs at Vgs.
The forward voltage drop is rated at 1.2 volts.
This MOSFET has a total of 3 pins.
The maximum power dissipation rating is 800 milliwatts.
It utilizes an enhancement mode N-channel type.
The width is 1.8 mm and the length is 2.1 mm.
It is suitable for industrial, consumer electronics, and power management applications.
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