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Microchip N-Channel Depletion Mode MOSFET 30 mA 500 V TO-243 4-Pin Surface Mount LND150N8-G

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Microchip N-Channel Depletion Mode MOSFET 30 mA 500 V TO-243 4-Pin Surface Mount LND150N8-G

Name: Microchip N-Channel Depletion Mode MOSFET 30 mA 500 V TO-243 4-Pin Surface Mount LND150N8-G
Brand: Microchip
SKU: 252797
Price: 1.07 USD
Availability: InStock

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Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin	India
Brand	Microchip
Height	1.6mm
Length	4.6mm
Model	LND150N8-G
Width	2.6mm
Mount Type	Surface
Series	LND150
Maximum Operating Temperature	150°C
Package Type	TO-243
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	30mA
Maximum Drain Source Voltage Vds	500V
Maximum Drain Source Resistance Rds	1kΩ
Channel Mode	Depletion
Maximum Power Dissipation Pd	1.6W
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	0.9V

Key Features

This MOSFET features high input impedance for efficient switching.
Low input capacitance enables fast switching speeds.
Depletion mode operation ensures normally-on transistor behavior.
Thermal dissipation rated at 1.6 W supports moderate power applications.
Operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
Maximum gate-source voltage range of -20 V to +20 V provides flexible control.
Compact dimensions of 4.6 mm length, 2.6 mm width, and 1.6 mm height facilitate dense PCB layouts.
The device is surface mount compatible for automated PCB assembly.

Product Description

Microchip LND150N8-G is an N-Channel Depletion Mode MOSFET designed for reliable, high-voltage switching applications. This discrete semiconductor device features a maximum continuous drain current of 30 mA and a maximum drain-source voltage of 500 V, housed in a compact TO-243 4-pin surface mount package. Its depletion mode channel type provides normally-on transistor functionality, making it ideal for specialized switching and control circuits.

Engineered with a high input impedance and low input capacitance, the LND150N8-G ensures fast switching speeds and minimum power loss. The MOSFET’s maximum power dissipation of 1.6 W allows it to handle moderate power levels efficiently, while its maximum gate-source voltage rating of -20 V to +20 V offers robust gate control for various circuit designs.

With an operating temperature range from -55°C to 150°C, this device is suited for demanding industrial and telecommunications environments. The compact mechanical dimensions (4.6 mm length, 2.6 mm width, 1.6 mm height) and surface mount package type ensure high-density mounting on printed circuit boards. The device does not carry specific certifications or automotive standards, focusing instead on reliable discrete semiconductor performance.

Designed for normally-on switches, solid state relays, converters, and linear amplifier circuits. Applications include power supply circuits, telecommunications, constant current sources, and electronic instrumentation. Low on-resistance and freedom from secondary breakdown enhance device durability and efficiency.

Its fast switching and low leakage currents optimize performance in sensitive analog and digital circuits. Surface mount package TO-243 enables easy automated assembly and compact design implementations.

This Microchip LND150N8-G MOSFET supports a wide range of industrial, commercial, and laboratory applications requiring robust high-voltage MOSFET performance with fast switching, moderate power handling, and compact form factor. EnvMart offers this device for engineers and designers seeking reliable semiconductor components for precision electronics.