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Microchip N-Channel Depletion Mode MOSFET, 170mA, 300V, 3-Pin TO-92 DN2530N3-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.2mm |
| Model | DN2530N3-G |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | DN2530 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 170mA |
| Maximum Drain Source Voltage Vds | 300V |
| Maximum Drain Source Resistance Rds | 12Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 740mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.8V |
Key Features
- Maximum continuous drain current of 170 mA for efficient current handling.
- Maximum drain-source voltage rating of 300 V ensuring robustness.
- TO-92 through-hole package with 3 pins for easy PCB mounting.
- Low input capacitance and low on-resistance for improved electrical performance.
- Wide operating temperature range from -55°C to +150°C for versatility.
- Maximum power dissipation of 740 mW facilitating reliable operation.
- Maximum gate-source voltage of -20 V to +20 V for flexible gate control.
- Compact dimensions with 5.33 mm height, 5.2 mm length, and 4.19 mm width.
Product Description
Microchip DN2530N3-G is a high-quality N-Channel Depletion Mode MOSFET transistor in a 3-pin TO-92 through-hole package designed for a variety of industrial and electronic applications. It features a maximum continuous drain current of 170 mA and an impressive maximum drain-source voltage rating of 300 V, making it suitable for circuits demanding high voltage tolerance.
This device offers high input impedance and low input capacitance, enabling fast switching speeds and improved circuit efficiency. It maintains reliable performance over a broad temperature range from -55°C up to 150°C, supporting usage in harsh environmental conditions.
The MOSFET's low on-resistance and freedom from secondary breakdown allow for efficient energy management in power supply circuits, linear amplifiers, solid-state relays, and converters. Its compact TO-92 package supports through-hole mounting on PCBs for easy integration into electronic equipment.
Maximum continuous drain current of 170 mA for effective current handling. Rated for 300 V maximum drain-source voltage ensuring durability. TO-92 package enables simple and reliable mounting on through-hole PCBs. Fast switching speeds due to low input capacitance and high input impedance.
Operates safely within temperature range of -55°C to +150°C. Maximum power dissipation of 740 mW supports robust operation. Gate-source voltage rating of -20 V to +20 V gives flexibility in control. Compact size with dimensions 5.33 mm (height) x 5.2 mm (length) x 4.19 mm (width).
Recommended in applications such as normally-on switches, solid state relays, linear amplifiers, constant current sources, power supplies, and telecom equipment.
Microchip brand represents reliable semiconductor components trusted in diverse industrial and electronic designs. This DN2530N3-G MOSFET transistor is optimal for high-voltage, low-current switching circuits where depletion mode operation is essential.
Explore more Microchip MOSFET products and electronics components at EnvMart for professional-grade electronic manufacturing and design solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 170 mA, allowing for effective current handling in various applications.
This MOSFET has a maximum drain-source voltage rating of 300 V, ensuring it can handle high voltage applications.
It comes in a TO-92 package type, which supports through-hole mounting on PCBs for easy integration.
The operating temperature range for this unit is from -55°C to +150°C, making it suitable for harsh environmental conditions.
The dimensions are 5.33 mm in height, 5.2 mm in length, and 4.19 mm in width, allowing for compact integration into designs.
The maximum power dissipation for the DN2530N3-G is 740 mW, which supports reliable operation in various applications.
The maximum gate-source voltage rating is -20 V to +20 V, providing flexibility in gate control.
This model features an N-channel, allowing for efficient operation in depletion mode.
The maximum drain-source resistance is 12 Ω, contributing to its low on-resistance characteristics.
It is recommended for applications such as normally-on switches, solid-state relays, linear amplifiers, and power supplies.
This MOSFET has a pin count of 3, designed for straightforward PCB integration.
The DN2530N3-G is manufactured in India, ensuring compliance with local manufacturing standards.
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