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Microchip N-Channel Depletion Mode MOSFET, 30 mA, 500 V, 3-Pin TO-92 LND150N3-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.2mm |
| Model | LND150N3-G |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | LND150 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30mA |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 1kΩ |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 740mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Features high input impedance and low input capacitance for efficient switching.
- Designed for normally-on switch applications with fast switching speeds.
- Offers low on-resistance and free from secondary breakdown.
- Operates reliably from -55°C to 150°C, suitable for harsh environments.
- Equipped with through-hole TO-92 package for easy PCB mounting.
- Ideal for use in solid state relays, current sources, linear amplifiers, and power supply circuits.
- Maximum power dissipation of 740 mW enables stable operation under load.
Product Description
Microchip LND150N3-G N-Channel Depletion Mode MOSFET is a discrete semiconductor device designed for industrial and electronic applications requiring high breakdown voltage and efficient switching capabilities. This 3-pin device comes in a TO-92 through-hole package, making it suitable for PCB assembly and prototyping.
It features a maximum continuous drain current of 30 mA and a high maximum drain-source voltage of 500 V, enabling it to function effectively in power management and control circuits. The depletion mode channel type provides a normally-on switch characteristic, suitable for constant current source applications.
With a maximum power dissipation rating of 740 mW, the MOSFET operates stably within a temperature range from -55°C to 150°C, making it reliable for industrial use, telecommunications, and power supply regulation. The device offers low on-resistance and is free from secondary breakdown, enhancing circuit durability and performance.
The LND150N3-G has low input capacitance and fast switching speed, making it well suited for use in solid state relays, converters, and linear amplifiers. The gate can tolerate voltages from -20 V to +20 V, providing design flexibility for various control schemes.
High input impedance and low capacitance improve switching efficiency. Normally-on depletion mode transistor for reliable current control. Robust power dissipation capacity for industrial applications. Wide operating temperature range suitable for harsh environments.
Through-hole TO-92 packaging for easy mounting and replacement. Ideal for telecom, power supply, and amplifier circuits. Low input and output leakage for stable operation.
This Microchip MOSFET is a crucial component for designers looking to implement dependable, high-voltage, low-current switching and amplification in their electronic designs, including industrial control systems and power management modules.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30 mA.
It has a maximum drain-source voltage of 500 V.
The maximum power dissipation rating is 740 mW, allowing stable operation under load conditions.
It operates reliably within a temperature range of -55°C to 150°C.
This MOSFET comes in a TO-92 through-hole package, suitable for PCB mounting.
The channel type is N-channel, specifically designed as a depletion mode device.
The dimensions are 5.33 mm in height, 5.2 mm in length, and 4.19 mm in width.
The maximum gate-source voltage is -20 V to +20 V, providing design flexibility.
It is ideal for use in solid state relays, current sources, linear amplifiers, and power supply circuits.
The maximum drain-source resistance is 1 kΩ, contributing to its low on-resistance characteristics.
It features low input capacitance, which enhances switching efficiency.
The normally-on characteristic of the depletion mode channel allows it to function effectively as a constant current source.
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