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Microchip N-Channel Depletion Mode MOSFET, 500 mA, 400 V, TO-220, 3-Pin, Through Hole DN2540N5-G

Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Height 16.51mm
Length 10.7mm
Model DN2540N5-G
Width 4.83mm
Mount Type Through Hole
Series DN2540
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 500mA
Maximum Drain Source Voltage Vds 400V
Maximum Drain Source Resistance Rds 25Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 15W
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.8V

Key Features

  • Designed for normally-on switch applications requiring high breakdown voltage.
  • Features low input capacitance and fast switching speeds.
  • Operates over a -55°C to 150°C temperature range.
  • Has a maximum power dissipation of 15 watts.
  • Utilizes through-hole mounting with 3 pins in a TO-220 package.
  • Maximum drain-source resistance is 25 ohms ensuring efficient conduction.
  • Maximum gate-source voltage ranges from -20 to +20 volts for reliable control.
  • Typical forward voltage is 1.8 volts supporting effective switching operations.

Product Description

Microchip DN2540N5-G is an N-Channel depletion mode MOSFET designed for industrial electronic applications requiring a high voltage rating of 400 V and continuous drain current of 500 mA. Packaged in a 3-pin TO-220 through-hole form factor, this transistor ensures robust mechanical and electrical connections.

The DN2540 series offers low input capacitance and fast switching speeds, making these devices ideal for normally-on switch applications, solid state relay circuits, linear amplifiers, power supply circuits, constant current sources, converters, and telecom equipment. The depletion mode characteristic provides normally-on operation, simplifying design architectures requiring default conduction.

Its operating temperature range spans from -55°C to 150°C, suitable for demanding environments. The maximum power dissipation of 15 watts accommodates moderate power applications. The device's maximum drain-source resistance of 25 ohms ensures minimal conduction loss, while the gate-source voltage rating of -20 V to +20 V provides a wide control window.

Features including high input impedance and freedom from secondary breakdown enhance reliability in industrial, telecom, and laboratory settings. The TO-220 package's dimensions (approx. 16.51 mm height, 10.7 mm length, 4.83 mm width) facilitate easy mounting and heat dissipation, with through-hole pins suitable for PCB insertion.

Designed for normally-on switches and solid state relays. Supports converter and telecom circuit requirements. Built for linear amplifiers and constant current sources. High input impedance reduces load on driving circuitry.

Fast switching speeds enable efficient power management. Low input capacitance minimizes switching losses. Robust power dissipation capacity of 15W. Wide operating temperature range from -55°C to 150°C.

Microchip's DN2540N5-G MOSFET is a reliable discrete semiconductor component suited for advanced industrial, electronic, and power management applications. Its feature set guarantees performance stability and ease of integration across multiple domains including manufacturing machinery, telecommunications infrastructure, and laboratory automation.

Explore more MOSFETs and discrete semiconductors within the Electronics & Electricals category at EnvMart to find the precise components for your projects and industrial solutions.

Microchip N-Channel Depletion Mode MOSFET, 500 mA, 400 V, TO-220, 3-Pin, Through Hole DN2540N5-G
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Frequently Asked Questions

The maximum continuous drain current for this model is 500 mA.

The maximum drain-source voltage rating is 400 V.

It has a maximum power dissipation capacity of 15 watts.

The operating temperature range spans from -55°C to 150°C.

This model utilizes through-hole mounting with a TO-220 package.

The dimensions are approximately 16.51 mm in height, 10.7 mm in length, and 4.83 mm in width.

The maximum gate-source voltage ranges from -20 V to +20 V.

The maximum drain-source resistance is 25 ohms.

The typical forward voltage is 1.8 volts.

This model features an N-channel configuration.

It is suitable for normally-on switch applications, solid state relay circuits, and linear amplifiers, among others.

It features low input capacitance, which contributes to fast switching speeds.

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