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Nexperia 2 Darlington Transistor PNP, -1 A 45 V HFE 1000, 3-Pin SOT-89 BST60

Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.6mm
Length 4.6mm
Model BST60
Mount Type Surface
Series BST60
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic -1A
Maximum Collector Emitter Voltage Vceo 45V
Number of Elements per Chip 2
Minimum DC Current Gain hFE 1000
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Emitter Saturation Voltage VceSAT -1.3V
Maximum Collector Base Voltage VCBO -60V
Maximum Collector Cut-off Current -50nA
Maximum Power Dissipation Pd 1.3W
Nexperia 2 Darlington Transistor PNP, -1 A 45 V HFE 1000, 3-Pin SOT-89

Key Features

  • Supports maximum collector current of 1 ampere.
  • Collector emitter voltage rating of 45 volts ensures reliable performance.
  • High current gain hFE of 1000 for sensitive amplification.
  • Compact 3-pin SOT-89 surface mount package.
  • Maximum power dissipation up to 1.3 watts for efficient heat handling.
  • Wide operating temperature range from -65°C to 150°C.
  • PNP transistor polarity suitable for specific circuit applications.
  • Durable design with maximum emitter base voltage of -5 volts.

Product Description

The Nexperia BST60 is a high-performance 2 Darlington Transistor with PNP polarity designed for applications requiring reliable switching and amplification at a maximum continuous collector current of 1 ampere and a collector emitter voltage of 45 volts. This device features a high DC current gain (hFE) of 1000 and is housed in a compact 3-pin SOT-89 surface mount package, enabling space-efficient designs in compact electronics.

It supports a maximum power dissipation of 1.3 watts, allowing for efficient thermal management during operation. The transistor is rated for operation over a wide temperature range from -65°C to 150°C, making it suitable for a variety of industrial, automotive, and consumer electronics applications where temperature resilience is critical.

Additional electrical characteristics include a maximum emitter base voltage (VEBO) of -5 volts, maximum collector emitter saturation voltage under -1.3 volts, and a maximum collector base voltage of -60 volts, providing robust performance under various electrical loads.

This transistor is suitable for compact circuit boards due to its small height of 1.6 mm and length of 4.6 mm. It is intended primarily for surface mount applications, allowing for automated assembly in modern manufacturing processes.

Supports maximum collector current of 1 ampere. Collector emitter voltage of 45 volts for dependable performance. High gain factor of 1000 ensures sensitive amplification. Surface mount 3-pin SOT-89 package for compact designs.

Wide operating temperature range from -65°C to 150°C. Maximum power dissipation rating of 1.3 watts. PNP transistor polarity for specific circuit functionality. Low collector cut-off current to minimize leakage. Maximum emitter base voltage of -5 volts improves durability.

Non-automotive standard device suitable for generalized electronic use.

This transistor finds use broadly across electronic components manufacturing, semiconductor applications, and various power and signal amplification tasks in industrial, automotive, and consumer electronic equipment.

Browse further products in Darlington Transistors to find compatible solutions for advanced electronic designs.

Nexperia 2 Darlington Transistor PNP, -1 A 45 V HFE 1000, 3-Pin SOT-89 BST60
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Frequently Asked Questions

The maximum continuous collector current for this model is -1 ampere.

The collector-emitter voltage rating is 45 volts, ensuring reliable performance in various applications.

This transistor features a high DC current gain (hFE) of 1000, which is suitable for sensitive amplification tasks.

The SOT-89 package has a height of 1.6 mm and a length of 4.6 mm, making it compact for surface mount applications.

It operates over a wide temperature range from -65°C to 150°C, suitable for various industrial and consumer applications.

The maximum power dissipation rating is 1.3 watts, allowing for efficient thermal management during operation.

The maximum emitter-base voltage (VEBO) for this transistor is -5 volts.

This is a PNP transistor, which is suitable for specific circuit applications requiring PNP polarity.

The maximum collector-emitter saturation voltage (VceSAT) is -1.3 volts, providing robust performance under load.

The maximum collector-base voltage (VCBO) is -60 volts, ensuring reliable operation under various electrical loads.

This transistor is suitable for power and signal amplification tasks in industrial, automotive, and consumer electronic equipment.

This model has a pin count of 3, designed for surface mount configurations.

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