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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | BST60 |
| Mount Type | Surface |
| Series | BST60 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | -1A |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Number of Elements per Chip | 2 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | -1.3V |
| Maximum Collector Base Voltage VCBO | -60V |
| Maximum Collector Cut-off Current | -50nA |
| Maximum Power Dissipation Pd | 1.3W |
| Nexperia 2 Darlington Transistor PNP, -1 A 45 V HFE | 1000, 3-Pin SOT-89 |
The Nexperia BST60 is a high-performance 2 Darlington Transistor with PNP polarity designed for applications requiring reliable switching and amplification at a maximum continuous collector current of 1 ampere and a collector emitter voltage of 45 volts. This device features a high DC current gain (hFE) of 1000 and is housed in a compact 3-pin SOT-89 surface mount package, enabling space-efficient designs in compact electronics.
It supports a maximum power dissipation of 1.3 watts, allowing for efficient thermal management during operation. The transistor is rated for operation over a wide temperature range from -65°C to 150°C, making it suitable for a variety of industrial, automotive, and consumer electronics applications where temperature resilience is critical.
Additional electrical characteristics include a maximum emitter base voltage (VEBO) of -5 volts, maximum collector emitter saturation voltage under -1.3 volts, and a maximum collector base voltage of -60 volts, providing robust performance under various electrical loads.
This transistor is suitable for compact circuit boards due to its small height of 1.6 mm and length of 4.6 mm. It is intended primarily for surface mount applications, allowing for automated assembly in modern manufacturing processes.
Supports maximum collector current of 1 ampere. Collector emitter voltage of 45 volts for dependable performance. High gain factor of 1000 ensures sensitive amplification. Surface mount 3-pin SOT-89 package for compact designs.
Wide operating temperature range from -65°C to 150°C. Maximum power dissipation rating of 1.3 watts. PNP transistor polarity for specific circuit functionality. Low collector cut-off current to minimize leakage. Maximum emitter base voltage of -5 volts improves durability.
Non-automotive standard device suitable for generalized electronic use.
This transistor finds use broadly across electronic components manufacturing, semiconductor applications, and various power and signal amplification tasks in industrial, automotive, and consumer electronic equipment.
Browse further products in Darlington Transistors to find compatible solutions for advanced electronic designs.
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