onsemi Digital Transistor 250 V 28.4W NPN Through Hole TO-220 3-Pin MJF47G

onsemi MJF47G digital transistor is a high voltage bipolar power NPN transistor designed to meet the needs of line operated audio output amplifiers, switching power supply drivers, and other switching applications requiring reliable performance and electrical isolation from the mounting surface.

This transistor comes in a TO-220 package with a through-hole mount and has 3 pins, making it suitable for robust industrial and electronic circuit board installations. The device supports a maximum collector emitter voltage (Vceo) of 250 V and can dissipate up to 28.4 W of power, ensuring it can handle demanding switching loads efficiently.

The MJF47G has a minimum DC current gain (hFE) of 30 and operates reliably at temperatures up to 150°C, making it suitable for harsh industrial environments. Its physical dimensions are compact with a length of 10.63 mm, width of 4.9 mm, and height of 9.28 mm, allowing it to fit constrained spaces in electronic assemblies.

This transistor's maximum collector base voltage is rated at 350 V, and the maximum emitter base voltage is 5 V dc. Its electrical isolation from the mounting surface eliminates the need for isolating washers, reducing system complexity and cost.

Manufactured in Korea, Republic Of, the MJF47G comes with a Pb-free package option complying with green electronics standards. This makes it an excellent component for power switching, amplification, and reliable Digital Transistor uses in industrial, commercial, and laboratory electronic applications.

High voltage bipolar power NPN transistor designed for audio output amplifiers and switching power supply drivers. Features a TO-220 package with 3-pin through-hole mount for easy installation. Maximum collector emitter voltage of 250 V supports high voltage applications.

Maximum power dissipation of 28.4 W enables robust switching performance. Minimum DC current gain (hFE) of 30 ensures effective current amplification. Maximum operating temperature up to 150°C ensures reliable performance under thermal stress.

Compact dimensions for flexible circuit design. No isolating washers required due to electrical isolation from heatsink. Manufactured in Korea, Republic Of, with Pb-free option available.

This transistor is ideal for industrial electronics, power supplies, amplification circuits, HVAC controls, manufacturing systems, and laboratory electronics. Discover more components in our Bipolar Transistors category on EnvMart for your next project.