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Nexperia NPN Transistor 100 mA 65 V Surface Mount 6-Pin SOT-457 BC846DS

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 3.1mm
Model BC846DS
Width 3mm
Mount Type Surface
Series BC846DS
Maximum Operating Temperature 150°C
Package Type SOT-457
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz
onsemi Transistor, 100 mA NPN, 65 V, 6-Pin SOT-363Brand onsemi

Key Features

  • This transistor supports a maximum DC collector current of 100 mA.
  • It operates at a maximum collector-emitter voltage of 65 V.
  • The package type is compact SOT-457 with 6 pins for surface mounting.
  • Has a minimum DC current gain (hFE) of 200 for efficient amplification.
  • Features a maximum power dissipation of 380 mW, suitable for low power circuits.
  • Operating temperature range spans from -55°C to 150°C, ensuring reliability under varied conditions.
  • Maximum transition frequency is 100 MHz, providing good high-frequency performance.
  • Pin count is 6, arranged for isolated transistor configuration.

Product Description

Nexperia BC846DS is a high-quality NPN bipolar junction transistor designed specifically for general purpose switching and amplification applications. This surface-mount transistor is encapsulated in a 6-pin SOT-457 package, making it suitable for compact and high density PCB layouts.

It supports a maximum DC collector current of 100 mA and can withstand a collector-emitter voltage of up to 65 V. The device features a minimum DC current gain of 200, ensuring good amplification efficiency. With a maximum power dissipation of 380 mW, the BC846DS is ideal for low power applications.

The transistor operates reliably within a broad temperature range from -55°C to 150°C, making it suitable for various industrial and automotive applications. Its maximum transition frequency of 100 MHz allows for good performance in high-frequency circuits.

The 6-pin isolated transistor configuration and compact dimensions of 3.1 mm length, 3 mm width, and 1.1 mm height optimize device integration on PCBs with limited space. This transistor meets the automotive standard AEC-Q101, assuring excellent quality and robustness for automotive and industrial electronics use cases.

This transistor supports a maximum DC collector current of 100 mA. It operates at a maximum collector-emitter voltage of 65 V. The package type is compact SOT-457 with 6 pins for surface mounting. Has a minimum DC current gain (hFE) of 200 for efficient amplification.

Features a maximum power dissipation of 380 mW, suitable for low power circuits. Operating temperature range spans from -55°C to 150°C, ensuring reliability under varied conditions. Maximum transition frequency is 100 MHz, providing good high-frequency performance.

Pin count is 6, arranged for isolated transistor configuration. Complies with automotive standard AEC-Q101, demonstrating high quality and durability. Physical dimensions are 3.1 mm length, 3 mm width, and 1.1 mm height, offering a compact footprint.

This transistor is widely used in industrial, automotive, communication, and electronic circuit design for switching and amplification roles. Its compact design supports high-density PCB applications and electronic component miniaturization efforts. Explore more Nexperia Bipolar Transistors and semiconductors on EnvMart for reliable electronics components.

Nexperia NPN Transistor 100 mA 65 V Surface Mount 6-Pin SOT-457 BC846DS
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It can withstand a maximum collector-emitter voltage of 65 V.

This transistor comes in a compact SOT-457 package with a 6-pin configuration for surface mounting.

The minimum DC current gain (hFE) is 200, which ensures efficient amplification.

The maximum power dissipation for this model is 380 mW, making it suitable for low power applications.

It operates reliably within a temperature range of -55°C to 150°C.

The maximum transition frequency is 100 MHz, providing good performance in high-frequency circuits.

The dimensions are 3.1 mm in length, 3 mm in width, and 1.1 mm in height.

This model complies with the automotive standard AEC-Q101, ensuring high quality and robustness.

It is an NPN bipolar junction transistor, suitable for general purpose switching and amplification applications.

The maximum emitter-base voltage (VEBO) is 6 V.

This transistor is widely used in industrial, automotive, communication, and electronic circuit design for switching and amplification roles.

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