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Microchip N-Channel MOSFET 640 mA, 30 V Enhancement, 3-Pin TO-92 VN0300L-G
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.08mm |
| Model | VN0300L-G |
| Width | 4.06mm |
| Mount Type | Through Hole |
| Series | VN0300 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 640mA |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 3.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 900mV |
| Drivers | relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc |
Key Features
- The MOSFET operates in enhancement mode providing reliable switching applications.
- Maximum power dissipation of 1 watt supports efficient thermal handling.
- Operating temperature range from -55°C to 150°C ensures suitability for harsh environments.
- Low forward voltage of 900 mV facilitates low conduction losses.
- Compact through-hole mounting in a TO-92 package measuring 5.08 mm length and 4.06 mm width.
- High maximum gate-source voltage of 30 V maintains device integrity under control signals.
- Free from thermal runaway and secondary breakdown due to vertical DMOS silicon gate design.
- Ideal for amplifiers, converters, relay drivers, motor controls, and power supply circuits.
Product Description
Microchip VN0300L-G is a N-Channel enhancement mode MOSFET designed for diverse electronics and power management applications. Featuring a maximum continuous drain current of 640 mA and a drain-source voltage rating up to 30 V, it supports efficient switching with a low drain-source resistance of 3.3 ohms. Packaged in a compact 3-pin TO-92 through-hole form factor measuring 5.33 mm height, 5.08 mm length, and 4.06 mm width, this MOSFET is suitable for PCB mounting in space-constrained designs.
This device uses a vertical DMOS structure fabricated with a silicon gate process, delivering excellent thermal stability and high input impedance. It offers superior protection against thermal runaway and secondary breakdown, assuring reliability in industrial, automotive, and consumer electronics use cases. With a maximum power dissipation of 1 watt and operating temperatures from -55°C to 150°C, the MOSFET can operate efficiently across demanding conditions.
Its low forward voltage (900 mV) and low capacitance allow for fast switching speeds and low power drive requirements. The device is well-suited for amplifiers, converters, relay and solenoid drivers, motor control circuits, and power supply switching.
The MOSFET is free from secondary breakdown and offers excellent thermal stability. It features an integral source-drain diode to improve switching performance. Low input capacitance enables efficient low power driving. Recommended for applications including relays, hammers, solenoids, lamps, memories, displays, and bipolar transistor replacement.
Originating from Taiwan, Province of China, the VN0300L-G MOSFET is a perfectly engineered component for reliable and long-term operation in electronics manufacturing, power management, automotive, and industrial sectors.
Explore further related products and components in the Environmental Mart’s Semiconductor MOSFET category for comprehensive solutions.
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Frequently Asked Questions
The VN0300L-G MOSFET has a maximum continuous drain current of 640 mA.
This model has a maximum drain-source voltage rating of 30 V.
The VN0300L-G is packaged in a TO-92 type and is designed for through-hole mounting.
The operating temperature range for the VN0300L-G is from -55°C to 150°C.
The maximum power dissipation of this MOSFET is 1 watt.
The dimensions of the VN0300L-G are 5.33 mm in height, 5.08 mm in length, and 4.06 mm in width.
This model is suitable for applications such as amplifiers, converters, relay drivers, motor controls, and power supply circuits.
The forward voltage of the VN0300L-G is 900 mV.
The maximum gate-source voltage for the VN0300L-G is 30 V.
The VN0300L-G is an N-channel enhancement mode MOSFET.
The maximum drain-source resistance of the VN0300L-G is 3.3 ohms.
The VN0300L-G complies with ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards.
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