Nexperia High Voltage NPN Transistor BF822,215 50 mA 250 V 3-Pin SOT-23 BF822,215

The Nexperia BF822,215 is a high voltage NPN bipolar transistor designed for switching and amplification in electronic circuits. It is rated for a collector current of 50 mA and can withstand a collector emitter voltage up to 250 V, making it suitable for various semiconductor electronics and power applications.

Encapsulated in a compact 3-pin SOT-23 surface mount package, this transistor fits well in space-constrained PCB layouts typically used in electronics manufacturing.

It features a minimum DC current gain of 50 and a maximum power dissipation of 250 mW, ensuring efficient operation under moderate load conditions. The device operates reliably in a temperature range from -65°C up to 150°C, supporting robust performance in harsh industrial, automotive, and consumer electronic environments.

With a maximum transition frequency of 60 MHz, the BF822,215 transistor is suitable for general purpose switching and amplification tasks in circuits requiring moderate frequency response.

Has a collector current rating up to 50 mA. Supports maximum collector emitter voltage of 250 V. Packaged in a compact 3-pin SOT-23 surface mount package. Features a DC current gain (hFE) minimum of 50. Maximum power dissipation of 250 mW for reliable operation.

Operational temperature range from -65°C to 150°C. Maximum transition frequency of 60 MHz suitable for switching applications. NPN polarity transistor configured as a single bipolar transistor. Physical dimensions: 3 mm length, 2.5 mm width, and 1.1 mm height.

RoHS compliant for environmentally safe use.

This transistor finds applications in industrial electronic devices, automotive electrical systems, power supplies, and general semiconductor circuits requiring reliable switching and amplification functions.

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