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ROHM N-Channel MOSFET 20 A, 650 V Enhancement Mode, 3-Pin TO-220FM Package R6520ENX
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | ROHM |
| Height | 15.4mm |
| Length | 10.3mm |
| Model | R6520ENX |
| Width | 4.8mm |
| Mount Type | Through Hole |
| Series | R6520ENX |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FM |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Low on-resistance ensures minimal power loss during operation.
- Fast switching speed suitable for efficient power management.
- Enhancement mode N-channel MOSFET for reliable control.
- Through-hole mount type enhances robust mechanical stability.
- Maximum power dissipation rating of 68 W supports high performance.
- Wide operating temperature range from -55°C to 150°C for versatile applications.
- Maximum gate source voltage of ±30 V allows high voltage control.
- Typical forward voltage of 1.5 V reduces conduction losses.
Product Description
The ROHM R6520ENX is a high-performance N-Channel MOSFET designed for switching applications requiring high efficiency and reliability. Featuring a maximum continuous drain current of 20 A and maximum drain-source voltage of 650 V, this MOSFET operates with low on-resistance and fast switching speeds to minimize power losses and improve thermal management.
Equipped with a 3-pin TO-220FM package and through-hole mounting style, the device offers robust mechanical stability for industrial and power electronics implementations. Its enhancement mode channel ensures efficient switching control with a maximum gate-source voltage tolerance of ±30 V and a typical forward voltage of 1.5 V.
The R6520ENX supports a maximum power dissipation rating of 68 W, enabling reliable sustained operation under demanding electrical loads. It operates effectively over a broad temperature range from -55°C to 150°C, making it suitable for a wide variety of industrial, electronic, and power management applications. The compact package dimensions (10.3 mm length, 4.8 mm width, and 15.4 mm height) facilitate integration into space-constrained circuit board designs.
This power MOSFET also features lead-free plating, aligning with environmental and regulatory standards. Manufactured in Japan, it ensures quality and consistency for professional-grade electronics development. Typical application areas include power supplies, motor drives, industrial controllers, and automotive electronics where durable and efficient MOSFETs are essential.
Low on-resistance supports enhanced energy efficiency. Fast switching speed optimizes performance in switching circuits. Through-hole mounting assures strong physical mounting on PCBs. Wide temperature operating range accommodates harsh environments.
Compact TO-220FM package is suitable for various board layouts. Pb-free plating for environmentally conscious manufacturing. Ideal for industrial, electronic, and automotive applications. Manufactured in Japan ensuring strict quality control.
Explore the ROHM MOSFET range in electronic components to find ideal solutions for your power management circuits and switching applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
The maximum power dissipation rating is 68 W, allowing for reliable operation under high loads.
The typical forward voltage for this model is 1.5 V, which helps reduce conduction losses.
The dimensions of the TO-220FM package are 10.3 mm in length, 4.8 mm in width, and 15.4 mm in height.
It operates over a wide temperature range from -55°C to 150°C, making it suitable for various applications.
This model uses a through-hole mounting style, which enhances mechanical stability.
The maximum gate-source voltage tolerance is ±30 V, allowing for high voltage control.
This MOSFET features an N-channel type, suitable for enhancement mode applications.
The maximum drain-source resistance is 200 mΩ, contributing to low on-resistance during operation.
It is suitable for applications such as power supplies, motor drives, industrial controllers, and automotive electronics.
This model is manufactured in Japan, ensuring quality and consistency in production.
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