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| Country of Origin | India |
|---|---|
| Brand | Texas Instruments |
| Height | 1.5mm |
| Length | 10mm |
| Model | ULN2003LVDR |
| Mount Type | Surface |
| Series | ULN2003LV |
| Maximum Operating Temperature | 85°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | EN 61340-5-1 |
| Pin Count | 16 |
| Maximum Continuous Collector Current Ic | 100mA |
| Maximum Collector Emitter Voltage Vceo | 8V |
| Number of Elements per Chip | 7 |
| Transistor Polarity | NPN |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.42V |
| Maximum Power Dissipation Pd | 580mW |
Texas Instruments ULN2003LVDR Darlington Transistor NPN 7 Elements, 100mA collector current, 8V collector emitter voltage, housed in a compact 16-Pin SOIC surface mount package. This transistor array is designed for medium to high current driver applications in diverse electronic circuits.
Its 7 identical Darlington pairs allow for versatile use in relay drivers, lamp drivers, display drivers, and other industrial control applications requiring high current gain with minimal component count.
The device supports a maximum continuous collector current of 100mA and withstands collector emitter voltages up to 8V, making it ideal for interfacing low voltage logic circuit outputs with higher power loads.
With a maximum power dissipation of 580mW and a low collector emitter saturation voltage of 0.42V, these transistors operate efficiently, maintaining low heat generation during switching.
Designed for surface mounting, the SOIC package with 16 pins and compact dimensions (10mm length, 1.5mm height) allows easy integration into modern PCB layouts requiring space optimization.
The transistor supports a wide operating temperature range from -40°C to 85°C, ensuring reliable performance in industrial, automotive, and laboratory settings. The transistor has a maximum continuous collector current of 100mA.
It operates with a maximum collector-emitter voltage of 8 volts. The package type is SOIC with surface mount and 16 pins. Features 7 elements per chip to allow medium to high current driver applications. Maximum power dissipation is 580mW ensuring stable operation under load.
Transistor polarity is NPN, suitable for switching and amplification. Maximum collector-emitter saturation voltage is 0.42 volts for efficient conduction. Operating temperature ranges from -40°C to 85°C for reliable performance.
Compact dimensions: length 10mm and height 1.5mm for space-saving PCB design.
This Darlington transistor array is widely used in electronic manufacturing, industrial controls, automotive electronics, and other applications requiring reliable medium-power signal amplification and switching.
Explore more Texas Instruments semiconductor products and Darlington Transistor arrays on EnvMart for industrial, laboratory, and commercial electronics needs.
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