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Microchip DN2540 N-Channel Depletion Mode MOSFET 170 mA 400 V TO-243 3-Pin DN2540N8-G
Specifications
| Country of Origin | United States |
|---|---|
| Brand | Microchip |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | DN2540N8-G |
| Width | 2.6mm |
| Mount Type | Surface |
| Series | DN2540 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-243 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 170mA |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 25Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 1.6W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.8V |
Key Features
- This MOSFET features a depletion mode normally-on channel for advanced control.
- Maximum continuous drain current is 170 mA, suitable for low power applications.
- Drain to source voltage withstands up to 400 V to handle high voltage circuits.
- Compact TO-243 surface mount package with 3 pins ensures easy PCB integration.
- Maximum power dissipation rating of 1.6 W supports moderate power loads efficiently.
- Wide operating temperature range from -55°C to 150°C suits harsh industrial environments.
- High input impedance and low gate-source voltage maximum of 20 V enables stable operation.
- Typical forward voltage drop of 1.8 V reduces power losses in switching applications.
Product Description
Microchip DN2540N8-G is a N-Channel depletion mode MOSFET designed with an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. It operates with a low threshold voltage and is normally on, providing power handling capabilities similar to bipolar transistors combined with the high input impedance and thermal stability inherent in MOS devices.
With a maximum continuous drain current (Id) of 170 mA and a high drain-to-source voltage (Vds) rating of 400 V, the DN2540N8-G is well-suited for switching and amplifying applications requiring fast switching speeds, low input capacitance, and high breakdown voltages.
The device is enclosed in a compact 3-pin TO-243 surface mount package, measuring 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height, facilitating easy integration onto printed circuit boards. It can safely dissipate up to 1.6 watts of power under operating conditions.
Operating temperatures range from -55°C to 150°C, allowing use in industrial and harsh environmental conditions. The maximum gate-to-source voltage (Vgs) is 20 V, while the forward voltage (Vf) is 1.8 V, supporting efficient switching with minimal losses.
Additional key attributes include low input and output leakage currents and immunity to thermal runaway and thermally induced secondary breakdown due to the vertical DMOS design. This MOSFET is ideal for applications in industrial electronics, power management, switching regulators, and signal amplification.
This product offers high input impedance for minimal control power loss. Low input capacitance enhances switching speeds for power electronics. Designed to prevent thermal runaway and secondary breakdown for reliability.
Suitable for industrial, laboratory, and commercial electrical and electronics applications. Manufactured in the United States to stringent quality specifications for dependable performance.
Explore the full range of semiconductor components and MOSFETs at EnvMart for your electronic design and manufacturing needs. Discover high-quality products from Microchip and other leading brands designed to meet rigorous industrial standards.
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Frequently Asked Questions
The maximum continuous drain current for this model is 170 mA, making it suitable for low power applications.
The DN2540N8-G has a maximum drain-to-source voltage rating of 400 V, allowing it to handle high voltage circuits.
This MOSFET is housed in a TO-243 surface mount package with dimensions of 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height.
It operates within a temperature range of -55°C to 150°C, suitable for harsh industrial environments.
The maximum power dissipation rating for the DN2540N8-G is 1.6 W, supporting moderate power loads efficiently.
The maximum gate-to-source voltage for this MOSFET is 20 V, which enables stable operation.
The typical forward voltage drop is 1.8 V, which helps reduce power losses in switching applications.
This model features a 3-pin configuration, facilitating easy integration onto printed circuit boards.
The DN2540N8-G utilizes an N-channel depletion mode, which is normally on, providing advanced control.
This MOSFET is suitable for applications in industrial electronics, power management, switching regulators, and signal amplification.
The maximum drain-source resistance for this model is 25 Ω, which is important for its performance in circuits.
This product is manufactured in the United States to stringent quality specifications for dependable performance.
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