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onsemi Darlington NPN Transistor 4A 350V 300 HFE 3-Pin DPAK NJD35N04T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NJD35N04T4G |
| Mount Type | Surface |
| Series | NJD35N04 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 350V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 300 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Maximum Collector Base Voltage VCBO | 700V |
| Maximum Collector Cut-off Current | 250μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 45W |
| onsemi NJD35N04T4G 1 Darlington Transistor NPN, 4 A 350 V HFE | 300, 3-Pin DPAK |
| onsemi NJVMJD122T4G 1 Darlington Transistor NPN, 8 A 100 V HFE | 100, 3-Pin DPAKBrand: onsemi |
Key Features
- Supports maximum continuous collector current of 4 amperes.
- Maximum collector emitter voltage is 350 volts for robust performance.
- Packaged in TO-252 surface mount type with 3 pins.
- Features a minimum DC current gain of 300 ensuring amplification efficiency.
- Can dissipate maximum power of 45 watts for high power applications.
- NPN transistor polarity designed for common emitter configuration.
- Operating temperature range from -65°C to 150°C for diverse environmental conditions.
- Complies with automotive standard AEC-Q101 for quality and reliability.
Product Description
onsemi NJD35N04T4G is a high-performance Darlington NPN transistor designed for power switching and amplification applications in electronics. It supports a maximum continuous collector current of 4 amperes and a maximum collector emitter voltage of 350 volts, suitable for high voltage circuits.
Housed in a TO-252 surface mount package with 3 pins, this transistor offers ease of integration into modern PCB layouts. The device provides a minimum DC current gain (hFE) of 300 ensuring efficient amplification performance for a variety of electronic devices and automotive systems.
With a maximum power dissipation of 45 watts and operating temperature range from -65°C up to 150°C, it is designed for demanding industrial and automotive environments. The transistor polarity is NPN, making it suitable for switching and amplification in standard transistor circuits.
Maximum continuous collector current of 4 A for reliable power handling. Maximum collector emitter voltage of 350 V ensuring voltage endurance. TO-252 surface mount package supporting compact mounting. Minimum DC current gain (hFE) of 300 for amplification efficiency.
Maximum power dissipation of 45 W for high power applications. Operating temperature range from -65°C to 150°C for broad environment suitability. Automotive standard AEC-Q101 compliant for automotive quality assurance. 3-pin configuration for common transistor usage.
Dimensions: Height 2.38mm, Length 6.73mm for space efficient design. This transistor is ideal for use in industrial, automotive, and electronic manufacturing sectors requiring reliable Darlington transistor performance. Explore more semiconductor and discrete component solutions in the Darlington Transistor category at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for the onsemi NJD35N04T4G is 4 amperes.
This model supports a maximum collector emitter voltage of 350 volts.
It has a minimum DC current gain (hFE) of 300, ensuring efficient amplification performance.
The maximum power dissipation for this unit is 45 watts, suitable for high power applications.
The operating temperature range is from -65°C to 150°C, allowing for use in diverse environmental conditions.
It is packaged in a TO-252 surface mount type with 3 pins, facilitating easy integration into PCB layouts.
This transistor has an NPN polarity, making it suitable for common emitter configurations.
The dimensions are 2.38 mm in height and 6.73 mm in length, allowing for a space-efficient design.
It complies with the automotive standard AEC-Q101, ensuring quality and reliability for automotive applications.
The maximum collector base voltage (VCBO) for this transistor is 700 volts.
The maximum emitter base voltage (VEBO) is 5 volts for this model.
This transistor is ideal for power switching and amplification applications in industrial, automotive, and electronic manufacturing sectors.
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