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onsemi 4-Element Uni-Directional TVS Diode Array 500 W, 8-Pin SOIC NUP4201DR2G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | NUP4201DR2G |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Clamping Voltage VC | 25V |
| Diode Configuration | Complex Array |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 6V |
| Peak Pulse Power Dissipation Pppm | 500W |
| Test Current It | 1mA |
| Maximum Reverse Leakage Current | 10μA |
Key Features
- Designed for uni-directional transient voltage suppression applications.
- Features a complex diode array configuration for enhanced protection.
- Minimum breakdown voltage of 6 volts ensures device activation at precise voltages.
- Surface-mount package with 8 pins for efficient PCB integration.
- Clamping voltage rated at 25 volts for effective voltage spike suppression.
- Operating temperature range from -55°C to 150°C enables use in harsh environments.
- ESD protection capability to safeguard sensitive electronics.
- Includes 4 elements per chip to protect multiple lines simultaneously.
Product Description
onsemi NUP4201DR2G is a 4-element uni-directional transient voltage suppression (TVS) diode array designed to provide robust ESD protection and voltage spike suppression in electronic circuits. Housed in an 8-pin SOIC surface-mount package, this diode array dissipates peak pulse power of 500 W, effectively safeguarding sensitive components against transient voltage events.
This TVS diode array features a complex diode configuration optimized for uni-directional protection with a minimum breakdown voltage of 6 V and a clamping voltage of 25 V, ensuring reliable activation during voltage surges. Its operational temperature range from -55°C to 150°C makes it suitable for industrial, automotive, and other demanding applications.
The device exhibits a low reverse leakage current of 10 μA, contributing to energy efficiency and stability in circuit operation. With four elements integrated per chip, it is ideal for multi-line ESD protection in power electronics, communication devices, and control systems.
Compact dimensions (5 mm length x 4 mm width x 1.5 mm height) enable high-density PCB layouts while maintaining performance. The surface-mount SOIC package offers ease of assembly and compatibility with automated manufacturing processes.
Uni-directional transient voltage suppression for precise voltage control. Complex diode array structure ensures superior protection in sensitive circuits. High peak pulse power dissipation of 500 W for robust surge handling.
Wide operating temperature range from -55°C to 150°C suitable for harsh environments. Four diode elements per chip provide multi-line protection capabilities. Low maximum reverse leakage current reduces power loss and improves efficiency.
Compact SOIC package supports space-saving PCB designs. Ideal for industrial, automotive, telecommunications, and consumer electronic applications.
This product is a reliable choice for engineers and manufacturers seeking effective transient voltage protection to enhance circuit longevity and reliability. Explore more TVS Diode Arrays and semiconductors on EnvMart for comprehensive component selection and procurement.
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Frequently Asked Questions
The onsemi NUP4201DR2G has a peak pulse power dissipation of 500 W, allowing it to effectively handle voltage spikes.
This model features a minimum breakdown voltage of 6 V, ensuring activation during voltage surges.
The clamping voltage for this TVS diode array is rated at 25 V, providing effective voltage spike suppression.
The operating temperature range for the NUP4201DR2G is from -55°C to 150°C, making it suitable for harsh environments.
Each chip of the NUP4201DR2G contains 4 elements, allowing for multi-line ESD protection.
This model is housed in an 8-pin SOIC surface-mount package, facilitating efficient PCB integration.
The maximum reverse leakage current for the NUP4201DR2G is 10 μA, contributing to energy efficiency in circuit operation.
This diode array features a complex diode configuration optimized for uni-directional protection.
The dimensions of this model are 5 mm in length, 4 mm in width, and 1.5 mm in height, enabling high-density PCB layouts.
This model is suitable for industrial, automotive, telecommunications, and consumer electronic applications due to its robust protection features.
The test current for the NUP4201DR2G is 1 mA, which is used for its performance testing.
The country of origin for the NUP4201DR2G is India.
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