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onsemi N-Channel MOSFET 23 A 100 V Enhancement Surface Mount 3-Pin TO-252 NTD6415ANLT4G

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onsemi N-Channel MOSFET 23 A 100 V Enhancement Surface Mount 3-Pin TO-252 NTD6415ANLT4G

Name: onsemi N-Channel MOSFET 23 A 100 V Enhancement Surface Mount 3-Pin TO-252 NTD6415ANLT4G
Brand: onsemi
SKU: 240492
Price: 1.43 USD
Availability: InStock

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Category Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.38mm
Length	6.73mm
Model	NTD6415ANLT4G
Width	6.22mm
Mount Type	Surface
Series	NTD6415ANL
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	23A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	56mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	83W
Typical Gate Charge Qg @ Vgs	20nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

The MOSFET features an enhancement mode channel for efficient switching.
It has a 3-pin TO-252 package designed for easy PCB mounting.
Maximum continuous drain current is 23 amperes for high current applications.
Drain-source voltage rating is 100 volts, suitable for power circuits.
Rds(on) is low at 56 milliohms, reducing conduction losses.
Typical gate charge is 20 nanocoulombs at Vgs, enabling fast switching.
It operates reliably from -55°C up to 175°C maximum temperature.
Package dimensions include length 6.73 mm, width 6.22 mm, and height 2.38 mm.

Product Description

onsemi NTD6415ANLT4G N-Channel MOSFET is a high-performance power transistor designed for industrial and automotive electronic applications. It features a surface mount TO-252 package with a 3-pin layout, facilitating compact and efficient PCB designs.

This MOSFET has a maximum continuous drain current rating of 23 amperes and can withstand drain-source voltages up to 100 volts, making it suitable for power switching, motor control, and load management circuits. The device operates in enhancement mode, providing efficient control and low leakage currents.

With a low maximum drain-source resistance of 56 milliohms (Rds(on)), this MOSFET reduces conduction losses and improves energy efficiency in switching operations. The typical gate charge of 20 nanocoulombs at gate-source voltage supports fast switching speeds, beneficial for high-frequency circuits.

The NTD6415ANLT4G withstands harsh operating conditions with a minimum operating temperature of -55°C and maximum operating temperature up to 175°C. It complies with the automotive industry standard AEC-Q101, ensuring durability and reliability in automotive and industrial environments.

Physical dimensions of the package are 6.73 mm length, 6.22 mm width, and 2.38 mm height, fitting standard surface mount footprints. The device delivers a maximum power dissipation of 83 watts, suitable for demanding power electronics applications.

The MOSFET features an enhancement mode channel for efficient switching. 3-pin TO-252 surface mount package for easy assembly. Maximum continuous drain current of 23 amperes. Drain-source voltage rating of 100 volts ensures high voltage tolerance.

Low on-resistance value improves efficiency. Typical gate charge allows fast switching performance. Wide operating temperature range from -55°C to 175°C. Automotive qualified under AEC-Q101 standard. Maximum power dissipation of 83 watts accommodates power demands.

Compact package dimensions suitable for PCB integration.

This onsemi MOSFET is commonly used in industrial, automotive, power supply, and electronics manufacturing sectors. Its robust electrical parameters and certification make it an ideal choice for reliable power management and control solutions. Browse our Semiconductor collection for compatible components and assembly tools on EnvMart.