onsemi NPN Darlington Transistor 1 A 80 V, 4-Pin SOT-223 Package BSP52T3G

The onsemi BSP52T3G is a high-performance NPN Darlington Transistor designed for efficient switching and amplification in electronic circuits. Packaged in a compact 4-Pin SOT-223 surface-mount package, it provides a maximum continuous collector current of 1 A and a collector-emitter voltage rating of 80 V, making it suitable for various power electronic applications.

This device features an exceptionally high minimum DC current gain (hFE) of 2000, allowing it to amplify signals effectively while maintaining low power loss. Its maximum power dissipation of 125 W ensures robust and reliable operation under demanding electrical loads.

The transistor is qualified to the automotive industry standard AEC-Q101, affirming its reliability and durability for automotive and industrial electronic use. It operates effectively across a wide temperature range from -65°C to 150°C, supporting use in harsh and variable environmental conditions.

With a maximum collector-emitter saturation voltage of 1.3 V and a pin count of 4 in a surface mount SOT-223 package, the BSP52T3G offers compactness and ease of integration on printed circuit boards, optimizing space without compromising performance.

Maximum continuous collector current: 1 A. Maximum collector-emitter voltage: 80 V. Minimum DC current gain (hFE): 2000. Maximum power dissipation: 125 W. Operating temperature range: -65°C to 150°C. Surface mount 4-Pin SOT-223 package.

NPN polarity for switching and amplification. Automotive qualification: AEC-Q101 standard.

This transistor is widely used in industrial electronics, automotive circuits, power amplification, and switching applications. Its high gain and robustness make it suitable for designing reliable and efficient electronic systems.

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