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Nexperia General Purpose NPN Transistor 1 A 80 V 3-Pin SOT-89 BSR43,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.5mm
Length 4.6mm
Model BSR43,115
Width 2.5mm
Mount Type Surface
Series BSR43
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 90V
Maximum Power Dissipation Pd 1.35W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
onsemi 2SC3646S-TD-E Transistor, 1 A NPN, 100 V, 3-Pin PCPBrand onsemi

Key Features

  • Maximum DC collector current of 1 ampere for effective switching and amplification.
  • Collector-emitter voltage rated at 80 volts suitable for general applications.
  • Compact SOT-89 surface-mount package with 3 pins for easy PCB integration.
  • High current gain (minimum hFE of 100) ensuring efficient transistor operation.
  • Maximum power dissipation of 1.35 watts supports moderate power applications.
  • Wide operating temperature range from -65°C to 150°C for reliability in harsh environments.
  • Single NPN transistor configuration designed for general-purpose electronic circuits.

Product Description

The Nexperia BSR43,115 is a general-purpose NPN bipolar transistor designed for a wide range of electronic applications. It features a maximum DC collector current of 1 ampere and a collector-emitter voltage rating of 80 volts, making it ideal for signal amplification and switching tasks in low to medium power electronic circuits.

Its compact SOT-89 surface mount package with 3 pins enables efficient PCB layout with reliable solderability. The transistor offers a high minimum DC current gain (hFE) of 100, providing strong amplification performance.

With a maximum power dissipation of 1.35 watts, the BSR43,115 transistor supports typical power requirements found in various semiconductor applications. The device is rated for operation in extreme environmental conditions, ranging from -65°C to 150°C, highlighting its robustness and suitability for automotive and industrial use cases where temperature endurance is critical.

The transistor is a single NPN configuration that is commonly used in consumer electronics, power management, industrial controls, and general signal processing circuits. Its compact size (4.6 mm length, 2.5 mm width, and 1.5 mm height) facilitates installation in space-constrained designs.

Maximum DC collector current of 1 ampere for effective switching and amplification. Collector-emitter voltage rated at 80 volts suitable for general applications. Compact SOT-89 surface-mount package with 3 pins for easy PCB integration.

High current gain (minimum hFE of 100) ensuring efficient transistor operation. Maximum power dissipation of 1.35 watts supports moderate power applications. Wide operating temperature range from -65°C to 150°C for reliability in harsh environments.

Single NPN transistor configuration designed for general-purpose electronic circuits. Compact dimensions: length 4.6 mm, width 2.5 mm, height 1.5 mm for space-saving designs.

This transistor is commonly applied in industrial, automotive, and general electronic manufacturing sectors requiring reliable and compact Bipolar Transistors. The Nexperia BSR43,115 combines quality and performance in a standardized package well-suited for modern electronics assembly.

Explore further semiconductor and transistor options within EnvMart to find compatible and supplementary components for your electronic design and production requirements.

Nexperia General Purpose NPN Transistor 1 A 80 V 3-Pin SOT-89 BSR43,115
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Frequently Asked Questions

The maximum DC collector current for the Nexperia BSR43,115 is 1 ampere, allowing for effective switching and amplification in electronic circuits.

The collector-emitter voltage rating of this transistor is 80 volts, making it suitable for general applications.

This model has a minimum DC current gain (hFE) of 100, ensuring efficient transistor operation.

The compact dimensions of this transistor are 4.6 mm in length, 2.5 mm in width, and 1.5 mm in height, facilitating installation in space-constrained designs.

The maximum power dissipation for the BSR43,115 is 1.35 watts, which supports moderate power applications.

The operating temperature range for the Nexperia BSR43,115 is from -65°C to 150°C, making it reliable in harsh environments.

This model comes in a compact SOT-89 surface-mount package with 3 pins, allowing for easy PCB integration.

The BSR43,115 features a single NPN transistor configuration, designed for general-purpose electronic circuits.

The maximum emitter-base voltage (VEBO) for the Nexperia BSR43,115 is 5 volts.

This transistor is commonly applied in consumer electronics, power management, industrial controls, and general signal processing circuits.

The maximum collector-base voltage (VCBO) for the Nexperia BSR43,115 is 90 volts.

The country of origin for the Nexperia BSR43,115 is India.

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