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Nexperia General Purpose NPN Bipolar Transistor, 100 mA Collector Current, 45 V Collector-Emitter Voltage BCM847BS,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 2.2mm |
| Model | BCM847BS,115 |
| Width | 2.2mm |
| Mount Type | Surface |
| Series | BCM847 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 300mW |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Current Mirror |
| Maximum Transition Frequency ft | 250MHz |
Key Features
- Designed for use in current mirror transistor configuration.
- Maximum power dissipation of 300 mW suitable for moderate power applications.
- Low emitter-base voltage of 6 V to ensure efficient switching performance.
- High minimum DC current gain (hFE) of 200 for reliable amplification.
- Operating temperature range from -65°C to 150°C for extended environmental tolerance.
- Maximum transition frequency (ft) of 250 MHz enables high-frequency operation.
- Compliant with RoHS standards ensuring environmentally safe manufacturing.
- Automotive grade compliance with AEC-Q101 standard for enhanced reliability.
Product Description
Nexperia BCM847BS,115 is a general purpose NPN bipolar transistor engineered for electronic component applications requiring up to 100 mA maximum DC collector current and 45 V collector-emitter voltage. Packaged in a 6-pin SOT-363 surface mount form, the transistor enables compact circuit designs for modern semiconductor solutions.
This transistor is configured primarily for use in current mirror circuits. It offers a maximum power dissipation of 300 mW allowing stable operation in moderate power electronic applications. The minimum DC current gain (hFE) of 200 ensures efficient amplification with low input drive.
Designed to operate within a broad temperature range of -65°C to 150°C, this component is suitable for demanding industrial, automotive, and electronic environments. Its maximum transition frequency (ft) of 250 MHz supports high-frequency switching and signal processing tasks.
Additionally, the transistor meets automotive reliability standards per AEC-Q101, making it a robust choice for vehicle electronics.
Physical dimensions are 2.2 mm in length and width, with a height of 1.1 mm, optimizing it for high-density printed circuit board layouts. The surface mount package type supports automated placement for efficient assembly.
Designed for current mirror transistor configuration. 300 mW maximum power dissipation for stable performance. 6 V maximum emitter-base voltage allowing low voltage operation. High current gain of 200 for efficient amplification.
Wide operating temperature range from -65°C to 150°C. High-frequency operation supported up to 250 MHz. RoHS compliant ensuring environmentally safe materials. AEC-Q101 automotive standard compliant for durability. Compact 6-pin SOT-363 surface mount package.
Ideal for industrial, automotive, and electronic applications. Explore Nexperia transistor products and related semiconductor components within EnvMart to meet your industrial and electronic design needs.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current for this model is 100 mA.
The maximum collector-emitter voltage (Vceo) for the BCM847BS,115 is 45 V.
It has a maximum power dissipation of 300 mW, suitable for moderate power applications.
This transistor operates within a temperature range of -65°C to 150°C.
The minimum DC current gain (hFE) is 200, ensuring reliable amplification.
The BCM847BS,115 supports a maximum transition frequency (ft) of 250 MHz for high-frequency operation.
It is packaged in a 6-pin SOT-363 surface mount configuration, which is suitable for compact circuit designs.
This model complies with the AEC-Q101 automotive standard, enhancing its reliability for vehicle electronics.
The maximum emitter-base voltage (VEBO) is 6 V, allowing for efficient switching performance.
The height of this transistor is 1.1 mm.
The width and length of this model are both 2.2 mm.
Yes, this transistor is compliant with RoHS standards, ensuring environmentally safe manufacturing.
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