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Nexperia PNP Transistor 2 A, 20 V, 3-Pin SOT-89 Package BC869,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.6mm
Length 4.6mm
Model BC869,115
Width 2.6mm
Mount Type Surface
Series BC869
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -20V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -32V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.35W
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 140MHz
onsemi Transistor, -4 A PNP, -50 V, 3-Pin PCPBrand onsemi

Key Features

  • Supports a maximum power dissipation of 1.35 W.
  • Features a maximum transition frequency of 140 MHz suitable for high-frequency switching applications.
  • Provides a minimum DC current gain (hFE) of 40 for amplification efficiency.
  • Operates reliably between temperatures of -55°C to 150°C.
  • Complies with RoHS and automotive AEC-Q101 standards ensuring quality and safety.
  • Compact dimensions of 4.6 mm length, 2.6 mm width, and 1.6 mm height enable space-saving PCB designs.
  • Designed as a general-purpose PNP bipolar transistor for discrete semiconductor applications.

Product Description

The Nexperia BC869,115 is a PNP bipolar transistor engineered for electronic components and power connector applications. It is designed to handle a maximum DC collector current of 2 A and withstand collector-emitter voltages up to 20 V, making it suitable for moderate power amplification and switching.

Encased in a 3-pin SOT-89 surface mount package, it facilitates efficient PCB layout and compact circuit assemblies. The device supports a maximum power dissipation of 1.35 W and offers a transition frequency of 140 MHz, allowing its use in high-frequency signal processing and amplification circuits.

This transistor provides a minimum DC current gain (hFE) of 40, ensuring effective signal amplification, and can operate reliably across a wide temperature range from -55°C to 150°C, suitable for both industrial and automotive environments.

The compact form factor with length 4.6 mm, width 2.6 mm and height 1.6 mm, combined with compliance to RoHS environmental standards and the automotive-grade AEC-Q101 certification, make it a robust choice for designers targeting stringent quality and safety requirements.

Maximum DC collector current: 2 A. Maximum collector-emitter voltage: 20 V. 3-pin SOT-89 surface mount package. Maximum power dissipation: 1.35 W. Transition frequency: 140 MHz. Operating temperature: -55°C to 150°C. RoHS compliant and AEC-Q101 automotive standard certified.

This transistor is ideal for use in semiconductors, discrete electronic applications, power management circuits, automotive electronics, and high-frequency amplification within industrial and commercial environments.

Explore extensive options in our Electronics & Electricals category for compatible semiconductors and transistors from leading brands like Nexperia on EnvMart.

Explore more products in our Bipolar Transistors category.

Nexperia PNP Transistor 2 A, 20 V, 3-Pin SOT-89 Package BC869,115
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Frequently Asked Questions

The maximum DC collector current for this model is 2 A.

It can withstand a maximum collector-emitter voltage of 20 V.

This transistor supports a maximum power dissipation of 1.35 W.

The maximum transition frequency is 140 MHz, making it suitable for high-frequency applications.

The dimensions are 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height.

The minimum DC current gain (hFE) is 40, which supports effective amplification.

It operates reliably between temperatures of -55°C to 150°C.

The BC869,115 is encased in a 3-pin SOT-89 surface mount package.

Yes, it complies with RoHS environmental standards.

It meets the AEC-Q101 automotive standard, ensuring quality for automotive applications.

The maximum emitter-base voltage (VEBO) is -5 V.

This model is suitable for discrete electronic applications, power management circuits, and high-frequency amplification.

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