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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3.5mm |
| Model | BCM857DS,115 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | BCM857DS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-457 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | -45V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 380mW |
| Maximum DC Collector Current Idc | -100mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 175MHz |
Nexperia BCM857DS,115 general purpose PNP transistor designed for discrete semiconductor applications requiring reliable switching and amplification at low currents and voltages.
This transistor features a maximum DC collector current of 100 mA and a durable maximum collector-emitter voltage of 45 V. The compact 6-pin SOT-457 surface-mount package facilitates high-density PCB mounting in electronic circuits.
Its isolated transistor configuration and minimum DC current gain (hFE) of 200 provide efficient signal amplification. Power dissipation capability of 380 mW and broad operating temperature range from -65°C to 150°C make it suitable for robust industrial and automotive electronics environments.
The device complies with RoHS environmental regulations and the automotive AEC-Q101 standard, guaranteeing quality and reliability for automotive applications. Physical dimensions are optimized for space-sensitive designs: length 3.5 mm, width 1.7 mm, and height 1.1 mm.
Supports a maximum DC collector current of 100 mA. Offers a maximum collector-emitter voltage rating of 45 V. Housed in a compact 6-pin SOT-457 surface-mount package. Provides a minimum DC current gain (hFE) of 200 ensuring amplification efficiency.
Handles a maximum power dissipation of 380 mW suited for low-power applications. Wide operating temperature range from -65°C to 150°C for robust performance. Complies with RoHS standards and meets AEC-Q101 automotive grade certification.
Minimal device dimensions with 3.5 mm length, 1.7 mm width, and 1.1 mm height.
This transistor is extensively used in industrial, automotive, telecommunications, and electronic device manufacturing sectors. It delivers stable performance for signal processing, switching circuits, and low-power amplification applications.
Explore additional semiconductor components and Bipolar Transistors to optimize your design requirements on EnvMart.
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