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Nexperia General Purpose PNP Transistor 100 mA, 45 V, 6-Pin SOT-457 BCM857DS,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3.5mm
Model BCM857DS,115
Width 1.7mm
Mount Type Surface
Series BCM857DS
Maximum Operating Temperature 150°C
Package Type SOT-457
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 175MHz

Key Features

  • Supports a maximum DC collector current of 100 mA.
  • Offers a maximum collector-emitter voltage rating of 45 V.
  • Housed in a compact 6-pin SOT-457 surface-mount package.
  • Provides a minimum DC current gain (hFE) of 200 ensuring amplification efficiency.
  • Handles a maximum power dissipation of 380 mW suited for low-power applications.
  • Wide operating temperature range from -65°C to 150°C for robust performance.
  • Complies with RoHS standards and meets AEC-Q101 automotive grade certification.
  • Minimal device dimensions with 3.5 mm length, 1.7 mm width, and 1.1 mm height.

Product Description

Nexperia BCM857DS,115 general purpose PNP transistor designed for discrete semiconductor applications requiring reliable switching and amplification at low currents and voltages.

This transistor features a maximum DC collector current of 100 mA and a durable maximum collector-emitter voltage of 45 V. The compact 6-pin SOT-457 surface-mount package facilitates high-density PCB mounting in electronic circuits.

Its isolated transistor configuration and minimum DC current gain (hFE) of 200 provide efficient signal amplification. Power dissipation capability of 380 mW and broad operating temperature range from -65°C to 150°C make it suitable for robust industrial and automotive electronics environments.

The device complies with RoHS environmental regulations and the automotive AEC-Q101 standard, guaranteeing quality and reliability for automotive applications. Physical dimensions are optimized for space-sensitive designs: length 3.5 mm, width 1.7 mm, and height 1.1 mm.

Supports a maximum DC collector current of 100 mA. Offers a maximum collector-emitter voltage rating of 45 V. Housed in a compact 6-pin SOT-457 surface-mount package. Provides a minimum DC current gain (hFE) of 200 ensuring amplification efficiency.

Handles a maximum power dissipation of 380 mW suited for low-power applications. Wide operating temperature range from -65°C to 150°C for robust performance. Complies with RoHS standards and meets AEC-Q101 automotive grade certification.

Minimal device dimensions with 3.5 mm length, 1.7 mm width, and 1.1 mm height.

This transistor is extensively used in industrial, automotive, telecommunications, and electronic device manufacturing sectors. It delivers stable performance for signal processing, switching circuits, and low-power amplification applications.

Explore additional semiconductor components and Bipolar Transistors to optimize your design requirements on EnvMart.

Nexperia General Purpose PNP Transistor 100 mA, 45 V, 6-Pin SOT-457 BCM857DS,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It offers a maximum collector-emitter voltage rating of 45 V.

This transistor is housed in a compact 6-pin SOT-457 surface-mount package.

It provides a minimum DC current gain (hFE) of 200, ensuring efficient amplification.

The maximum power dissipation capability is 380 mW, suitable for low-power applications.

It has a wide operating temperature range from -65°C to 150°C.

This model complies with the AEC-Q101 automotive grade certification.

The dimensions are 3.5 mm in length, 1.7 mm in width, and 1.1 mm in height.

The maximum transition frequency is 175 MHz.

It features an isolated transistor configuration.

The maximum emitter-base voltage (VEBO) is -5 V.

This transistor is extensively used in industrial, automotive, telecommunications, and electronic device manufacturing sectors.

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