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Nexperia Silicon Junction Switching Diode Common Anode 225 mA 200 V 3-Pin SOT-23 BAV23A,215

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Nexperia Silicon Junction Switching Diode Common Anode 225 mA 200 V 3-Pin SOT-23 BAV23A,215

Name: Nexperia Silicon Junction Switching Diode Common Anode 225 mA 200 V 3-Pin SOT-23 BAV23A,215
Brand: Nexperia
SKU: 236730
Price: 0.07 USD
Availability: InStock

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Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	BAV23A,215
Width	1.4mm
Mount Type	Surface
Series	BAV23A
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	350mW
Diode Configuration	Common Anode
Peak Non-Repetitive Forward Surge Current Ifsm	9A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	50ns
Maximum Forward Current If	225mA
Maximum Peak Reverse Repetitive Voltage Vrrm	200V

Key Features

The diode uses a silicon junction technology suitable for switching applications.
It features a compact 3-pin SOT-23 surface-mount package for high density circuit designs.
Supports a maximum power dissipation of 350 mW and a peak surge current of 9 A.
Has a peak reverse recovery time of 50 ns enabling fast switching speeds.
Operates reliably in temperatures ranging from -65°C to 150°C.
Designed for low leakage current and low capacitance performance.
Ideal for use in electronic devices requiring efficient switching and rectification.
No specific automotive or standards approvals are applicable.

Product Description

Nexperia BAV23A,215 is a silicon junction switching diode designed with a common anode configuration. It features a compact 3-pin SOT-23 surface mount package, making it ideal for customized high density electronic circuit designs. The diode supports a maximum forward current of 225 mA and withstands a maximum repetitive peak reverse voltage of 200 V, with a typical forward voltage drop of 1.25 V. It dissipates up to 350 mW of power and can handle non-repetitive forward surge currents up to 9 A, making it robust for demanding applications.

This diode is optimized for fast switching performance with a peak reverse recovery time of 50 ns and minimal leakage currents. Its operating temperature range from -65°C to 150°C allows reliable use in both industrial and commercial electronic circuits. The compact dimensions measuring 3 mm length, 1.4 mm width, and 1.1 mm height enable efficient space utilization on PCBs.

Typical applications include switching and rectification duties in power supplies, electronic devices, signal processing equipment, and various semiconductor-based circuits. The low capacitance and high voltage capability make it suitable for high-frequency switching circuits. The device does not hold specific automotive certifications and conforms to standard semiconductor protections.

The diode configuration is common anode suitable for switching applications. It is based on silicon junction technology to ensure stable electrical characteristics. Built for surface mount on compact SOT-23 package to support miniaturized electronic assemblies.

Provides high switching speed with a peak recovery time of 50 ns. Wide operating temperature range ensures durability over harsh conditions. Handles surge currents up to 9 A for transient protection needs. Designed for low leakage current to improve circuit efficiency.

Useful for commercial, industrial, and electronic manufacturing applications. Explore a wide range of Switching Diodes and discrete semiconductor components on EnvMart for your electronic design and manufacturing requirements.