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onsemi NPN Darlington Transistor 2 A 100 V TO-252 Surface Mount, 3-Pin MJD112G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MJD112G |
| Mount Type | Surface |
| Series | MJD112 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 2A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 20μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| onsemi 1 Darlington Transistor NPN, 2 A 100 V HFE | 1000, 3-Pin DPAK |
Key Features
- This transistor supports a maximum continuous collector current of 2 amperes.
- It features a maximum collector-emitter voltage of 100 volts suitable for medium power applications.
- The device has three pins configured in a DPAK package for surface mounting.
- The minimum DC current gain (hFE) is 1000, ensuring high amplification efficiency.
- Maximum power dissipation capability is 20 watts, supporting stable performance under load.
- Designed to operate between -65°C to 150°C, enabling reliable use in harsh environments.
- The transistor has a maximum emitter base voltage of 5 volts and a collector base voltage of 100 volts.
- Complies with automotive standard AEC-Q101, ideal for automotive and industrial uses.
Product Description
onsemi MJD112G is an NPN Darlington transistor designed for applications requiring high current gain and voltage capabilities. With a maximum continuous collector current of 2 amperes and a collector-emitter voltage rating of 100 volts, it suits a wide range of medium power electronic circuits.
The transistor is housed in a TO-252 (DPAK) package, supporting surface mounting on PCBs for compact and efficient designs. Its minimum DC current gain (hFE) of 1000 ensures excellent amplification performance in signal and power stages.
Operating temperature range from -65°C up to 150°C allows deployment in demanding industrial, automotive, and power management environments. The device supports power dissipation up to 20 watts, providing robust thermal handling and reliability.
Physically, the transistor measures 6.73 mm in length and 2.38 mm in height, making it suitable for space-constrained applications. Its compliance with automotive quality standards (AEC-Q101) ensures the MJD112G meets stringent reliability and quality benchmarks required for automotive electronics.
This transistor supports a maximum continuous collector current of 2 amperes. Maximum collector-emitter voltage rating is 100 volts, accommodating medium power circuits. High minimum current gain of 1000 for efficient signal amplification.
Power dissipation capability of up to 20 watts to manage thermal loads. Operating temperature range from -65°C to 150°C suits harsh environments. Surface mount TO-252 package with three pins for streamlined PCB assembly.
Maximum collector-emitter saturation voltage of 2 volts reduces switching losses. Complies with AEC-Q101 automotive standard for quality assurance. Compact size enhances integration into various electronic systems.
The MJD112G transistor from onsemi is ideal for use in automotive electronics, power management circuits, industrial equipment, and general-purpose amplification tasks. Its robust ratings and packaging style facilitate versatile integration and dependable performance.
Browse the Electronics & Electricals catalog at EnvMart for more Darlington Transistors and related semiconductor components.
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Frequently Asked Questions
The MJD112G transistor supports a maximum continuous collector current of 2 amperes.
It features a maximum collector-emitter voltage rating of 100 volts, suitable for medium power applications.
The minimum DC current gain (hFE) is 1000, ensuring high amplification efficiency.
The maximum power dissipation capability is 20 watts, supporting stable performance under load.
This model operates between -65°C to 150°C, enabling reliable use in harsh environments.
It is housed in a TO-252 (DPAK) package, which supports surface mounting on PCBs.
The transistor measures 6.73 mm in length and 2.38 mm in height.
It complies with the automotive standard AEC-Q101, ensuring reliability and quality for automotive applications.
The maximum emitter base voltage (VEBO) is 5 volts.
This model has three pins configured in its package, suitable for streamlined PCB assembly.
The maximum collector base voltage (VCBO) is rated at 100 volts.
The MJD112G is an NPN Darlington transistor designed for applications requiring high current gain and voltage capabilities.
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