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ROHM Power MOSFET Type P-Channel 13 A 100 V Enhancement Mode 3-Pin TO-252 RD3P130SPTL1

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ROHM Power MOSFET Type P-Channel 13 A 100 V Enhancement Mode 3-Pin TO-252 RD3P130SPTL1

Name: ROHM Power MOSFET Type P-Channel 13 A 100 V Enhancement Mode 3-Pin TO-252 RD3P130SPTL1
Brand: ROHM
SKU: 234774
Price: 1.59 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	2.3mm
Length	6.8mm
Model	RD3P130SPTL1
Width	6.4mm
Mount Type	Surface
Series	RD3P130SP
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Standards/Approvals	Pb-free lead plating, RoHS
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	13A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	200mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	40nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

This MOSFET operates in enhancement mode with a low on-resistance of 200 milliohms.
It supports a maximum power dissipation of 2 watts for efficient thermal performance.
The device features a maximum gate-source voltage of 20 volts and a forward voltage of 1.2 volts.
Operating temperature range is wide from -55°C to 150°C for harsh conditions.
With a typical gate charge of 40 nanocoulombs, it enables fast switching applications.
Surface mount TO-252 package with compact dimensions of 6.8 mm length, 6.4 mm width, and 2.3 mm height.
RoHS compliant with lead-free plating ensuring environmentally safe usage.

Product Description

ROHM RD3P130SPTL1 is a high-performance Power MOSFET designed for switching and amplification applications in electronics and electrical systems. This type P-channel MOSFET is rated for a maximum continuous drain current of 13 amperes and a drain-source voltage of 100 volts, making it suitable for demanding power management tasks.

Featuring an enhancement mode channel with a low drain-source resistance of 200 milliohms, the RD3P130SPTL1 ensures minimal conduction losses and efficient power dissipation up to 2 watts under typical operating conditions.

The device's maximum gate-source voltage of 20 volts and forward voltage of 1.2 volts provide reliable drive characteristics and fast switching speeds supported by a typical gate charge of 40 nanocoulombs. Operating safely in temperatures ranging from -55°C to 150°C, it is well suited for industrial, automotive, and consumer electronic applications.

The RD3P130SPTL1 comes in a compact TO-252 surface-mount package with dimensions of 6.8 mm length, 6.4 mm width, and 2.3 mm height, facilitating easy PCB integration and space savings.

Low on-resistance ensures high efficiency and reduced heat generation. Fast switching characteristics support high-frequency power conversion. Wide operating temperature range tolerates industrial environments. Compact TO-252 package supports surface mounting for durable applications.

RoHS compliant lead-free plating aligns with environmental regulations.

This MOSFET is ideal for use in power supplies, motor drives, load switching, and other power management circuits within industrial, automotive, and electronic instrument sectors. ROHM's commitment to quality and innovation ensures reliable performance in critical applications.

Explore more high-quality ROHM semiconductor components and discrete MOSFET devices at EnvMart for versatile industrial and laboratory use.