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ROHM N-Channel MOSFET, 2.5 A, 30 V Enhancement Mode, 3-Pin SC-96 Package RQ5E025SNTL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 950μm |
| Length | 3mm |
| Model | RQ5E025SNTL |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RQ5E025SN |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-96 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 118mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports enhancement mode operation ensuring efficient switching.
- Maximum continuous drain current of 2.5 amperes for reliable performance.
- Maximum drain-source voltage is rated at 30 volts for robust voltage handling.
- Incorporates built-in gate-source protection diode for device safety.
- Compact surface mount SC-96 package suitable for space-constrained PCB layouts.
- Maximum power dissipation of 1 watt supporting thermal stability up to 150°C.
- Low on-resistance of 118 milliohms minimizes conduction losses.
- Operates reliably at temperatures from -55°C to 150°C.
Product Description
ROHM RQ5E025SNTL is a high-performance N-Channel MOSFET designed for efficient switching applications in electronic circuits. It operates in enhancement mode with a maximum continuous drain current of 2.5 amperes and a maximum drain-source voltage rating of 30 volts. Packaged in a compact 3-pin SC-96 surface mount package, this MOSFET is optimized for space-saving PCB integration and reliable thermal performance.
The device features low on-resistance at 118 milliohms and a built-in gate-source protection diode, which enhances durability and reduces the need for additional external components. It is capable of dissipating up to 1 watt of power while operating efficiently in industrial temperature ranges from -55°C to 150°C.
The RQ5E025SNTL exhibits a typical gate charge of 2.9 nanocoulombs, supporting rapid switching suitable for power management in diverse industrial, automotive, and consumer electronics applications.
Supports enhancement mode operation ensuring efficient switching. Maximum continuous drain current of 2.5 amperes for reliable performance. Maximum drain-source voltage is rated at 30 volts for robust voltage handling. Incorporates built-in gate-source protection diode for device safety.
Compact surface mount SC-96 package suitable for space-constrained PCB layouts. Maximum power dissipation of 1 watt supporting thermal stability up to 150°C. Low on-resistance of 118 milliohms minimizes conduction losses.
Operates reliably at temperatures from -55°C to 150°C. Typical gate charge of 2.9 nanocoulombs enables fast switching speeds. Forward voltage drop is 1.2 volts ensuring efficient current flow.
This MOSFET is ideal for use in power management, switching regulators, and signal amplification in industrial controls, automotive electronics, and various consumer electronic devices.
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Frequently Asked Questions
The maximum continuous drain current of this model is 2.5 amperes.
This MOSFET has a maximum drain-source voltage rating of 30 volts.
It is packaged in a compact 3-pin SC-96 surface mount package.
The on-resistance is rated at 118 milliohms, which helps minimize conduction losses.
This unit operates reliably within a temperature range of -55°C to 150°C.
It can dissipate a maximum power of 1 watt, supporting thermal stability.
Yes, it incorporates a built-in gate-source protection diode for enhanced device safety.
The typical gate charge is 2.9 nanocoulombs, enabling fast switching speeds.
The forward voltage drop is rated at 1.2 volts, ensuring efficient current flow.
The dimensions are 950μm in height, 3mm in length, and 1.8mm in width.
This model is suitable for power management, switching regulators, and signal amplification in various electronic devices.
It utilizes an N-channel design, operating in enhancement mode.
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