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onsemi NPN Darlington Transistor 300 mA 30 V, 3-Pin SOT-23 Package MMBTA14LT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | MMBTA14LT1G |
| Mount Type | Surface |
| Series | MMBTA13LT1 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 300mA |
| Maximum Collector Emitter Voltage Vceo | 30V |
| Number of Elements per Chip | 2 |
| Minimum DC Current Gain hFE | 5000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Maximum Collector Base Voltage VCBO | 30V |
| Maximum Collector Cut-off Current | 100nA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 300mW |
| onsemi MMBTA14LT1G 2 Darlington Transistor NPN, 300 mA 30 V HFE | 5000, 3-Pin SOT-23 |
Key Features
- Features a minimum DC current gain (hFE) of 5000 for efficient switching.
- Supports maximum power dissipation of 300 milliwatts ensuring device reliability.
- Maximum operating temperature ranges from -55°C to 150°C for diverse environmental conditions.
- Compact SOT-23 surface mount package with 3 pins simplifies PCB assembly.
- Automotive qualified to AEC-Q101 standard for enhanced quality assurance.
- Polarity is NPN with a Darlington pair configuration for high current gain.
- Maximum collector cutoff current is low at 100 nA to minimize leakage.
- Maximum emitter base voltage of 10 V and collector base voltage of 30 V ensure stable operation.
Product Description
onsemi MMBTA14LT1G is a high-performance NPN Darlington transistor designed for compact electronic circuits requiring high current gain and reliable switching up to 300 mA collector current.
Equipped with a 3-Pin SOT-23 package, it enables surface mounting on printed circuit boards, providing robust mechanical stability and minimal space usage.
The device supports a maximum collector emitter voltage of 30 V, maximum power dissipation of 300 mW, and operates efficiently across a wide temperature range from -55°C to 150°C, making it suitable for automotive, industrial, and general-purpose applications.
With a minimum DC current gain (hFE) of 5000, this transistor excels in amplification and switching tasks in various semiconductor circuits. The MMBTA14LT1G meets the AEC-Q101 automotive qualification standard, ensuring high reliability in automotive systems.
Minimum DC current gain of 5000 for precise amplification. Supports collector current up to 300 mA and power dissipation of 300 mW. Wide operating temperature range from -55°C to 150°C. SOT-23 package with surface mount type and 3 pins for easy integration.
Polarity NPN with Darlington pairing for high-performance switching. Low collector cutoff current of 100 nA minimizes leakage currents. Automotive standard compliance (AEC-Q101) guarantees dependable operation. This transistor is ideal for industrial electronics, automotive control circuits, power management boards, and general-purpose amplification tasks.
Explore additional onsemi semiconductor products in the Darlington Transistor category on EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for the MMBTA14LT1G is 300 mA.
This model has a minimum DC current gain (hFE) of 5000, which allows for efficient amplification.
The maximum collector-emitter voltage (Vceo) for this transistor is 30 V.
It operates efficiently across a wide temperature range from -55°C to 150°C.
The MMBTA14LT1G comes in a compact SOT-23 surface mount package with 3 pins.
The maximum power dissipation supported by this transistor is 300 mW.
The maximum emitter-base voltage (VEBO) for this transistor is 10 V.
This model is automotive qualified to the AEC-Q101 standard, ensuring high reliability.
The polarity of this transistor is NPN, featuring a Darlington pair configuration.
The maximum collector cut-off current is 100 nA, which helps minimize leakage.
The height of the SOT-23 package for this model is 1.01 mm.
This transistor is suitable for applications in automotive control circuits, industrial electronics, and general-purpose amplification tasks.
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