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onsemi Silicon Junction Switching Diode, Single, 2 A Forward Current, 400 V Peak Reverse Voltage, Surface Mount MURA140T3G

Category Switching Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.05mm
Length 4.57mm
Model MURA140T3G
Width 2.92mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type DO-214AC
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 35A
Maximum Forward Voltage Vf 1.1V
Peak Reverse Recovery Time trr 65ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 400V

Key Features

  • Single diode configuration for reliable switching performance.
  • Surface mount DO-214AC package suitable for compact circuit designs.
  • Maximum forward current rating of 2 amperes ensures robust operation.
  • Peak reverse recovery time of 65 nanoseconds for efficient switching.
  • Operating temperature range from -65°C to 175°C for wide environment compatibility.
  • Low maximum forward voltage drop of 1.1 volts minimizes power loss.
  • High peak non-repetitive surge current capability of 35 amperes.
  • Not certified for automotive standards but suitable for general electronic applications.

Product Description

onsemi MURA140T3G Silicon Junction Switching Diode is a single diode designed for surface mount technology in electronic circuits requiring reliable rectification and fast switching. It offers a maximum forward current of 2 amperes and a peak reverse repetitive voltage of 400 volts, making it ideal for power management and protection circuits.

The diode's DO-214AC package provides a compact footprint with dimensions of 4.57 mm length, 2.92 mm width, and 2.05 mm height. It features a peak reverse recovery time of 65 nanoseconds, enabling high-speed switching performance essential for modern electronic devices.

Operating over a wide temperature range from -65°C to 175°C, the MURA140T3G diode ensures stable performance in demanding industrial, laboratory, and commercial electronics environments. Its maximum forward voltage of 1.1 volts helps reduce power dissipation and improve energy efficiency.

This diode withstands peak non-repetitive surge currents up to 35 amperes, providing resilience against transient conditions. While it is not AEC-Q101 automotive qualified, it is suitable for use in general power electronics, electronic design, and manufacturing applications.

Single diode configuration for reliable switching performance. Surface mount DO-214AC package suitable for compact circuit designs. Maximum forward current rating of 2 amperes ensures robust operation. Peak reverse recovery time of 65 nanoseconds for efficient switching.

Operating temperature range from -65°C to 175°C for wide environment compatibility. Low maximum forward voltage drop of 1.1 volts minimizes power loss. High peak non-repetitive surge current capability of 35 amperes. Compact dimensions: length 4.57 mm, width 2.92 mm, height 2.05 mm.

Not certified for automotive standards but suitable for general electronic applications.

This product is perfect for use in electronic component manufacturing, power supply designs, industrial electronics, and research laboratories. Explore more semiconductor devices and Switching Diodes in this category on EnvMart for your project needs.

onsemi Silicon Junction Switching Diode, Single, 2 A Forward Current, 400 V Peak Reverse Voltage, Surface Mount MURA140T3G
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Frequently Asked Questions

The maximum forward current rating of this diode is 2 amperes.

The dimensions of the package are 4.57 mm in length, 2.92 mm in width, and 2.05 mm in height.

It operates over a wide temperature range from -65°C to 175°C.

The maximum forward voltage drop is 1.1 volts, which helps minimize power loss.

This model can handle a peak non-repetitive surge current of 35 amperes.

It features a surface mount configuration suitable for compact circuit designs.

This diode has a pin count of 2.

No, it is not certified for automotive standards but is suitable for general electronic applications.

It is suitable for use in electronic component manufacturing, power supply designs, industrial electronics, and research laboratories.

The sub-type of this diode is Silicon Junction.

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