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| Country of Origin | India |
|---|---|
| Diameter | 2.7mm |
| Brand | onsemi |
| Height | 5.2mm |
| Length | 5.2mm |
| Model | MUR220G |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 35A |
| Maximum Forward Voltage Vf | 950mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
The onsemi MUR220G is a silicon junction switching diode designed for applications requiring reliable rectification and switching performance. This single diode device supports a maximum forward current of 2 amperes and a peak reverse repetitive voltage rating of 200 volts, suitable for a wide variety of electronic circuits.
The diode is housed in a commonly used DO-41 through-hole package, facilitating easy mounting on printed circuit boards with two pins. It provides a peak reverse recovery time of 35 nanoseconds, enabling fast switching with minimal power losses in high-frequency applications.
The maximum forward voltage drop is 950 millivolts, allowing efficient conduction under load while minimizing heat generation. The diode operates reliably in a broad temperature range from -65°C to 175°C, suitable for industrial, consumer electronics, and other demanding environments.
The device measures 5.2 mm in length and height with a diameter of 2.7 mm, making it compact for integration into space-constrained designs. It does not bear specific automotive certifications and is recommended for general switching and rectification duties in power supplies, converters, and industrial electronic equipment.
Single diode configuration for switching and rectification. Maximum forward current of 2 A for robust load handling. Peak reverse voltage rating of 200 V for reliable blocking capability. DO-41 through-hole package for straightforward PCB mounting.
Fast peak reverse recovery time of 35 ns for efficient high-frequency operation. Wide operating temperature range from -65°C to 175°C. Compact physical dimensions suitable for tight assemblies. Uses silicon junction technology for stable electrical characteristics.
No automotive qualification, suited for general electronics use.
This switching diode serves well in industrial, manufacturing, laboratory, and consumer electronic sectors where reliable diode performance is critical. It is ideal for power rectification, freewheeling, and other general switching applications.
Explore more components in the Discrete Semiconductors category at EnvMart for comprehensive solutions in your electronic design projects.
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