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onsemi Silicon Junction Switching Diode, Single Configuration, 4 A Forward Current, 600 V Maximum Reverse Voltage MUR460G
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5.3mm |
| Brand | onsemi |
| Height | 9.5mm |
| Length | 9.5mm |
| Model | MUR460G |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-201AD |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 110A |
| Maximum Forward Voltage Vf | 1.28V |
| Peak Reverse Recovery Time trr | 75ns |
| Maximum Forward Current If | 4A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V |
Key Features
- Single silicon junction diode configuration with a DO-201AD package.
- Maximum forward current of 4 amperes and peak surge current of 110 amperes.
- Maximum reverse repetitive voltage rating of 600 volts.
- Peak reverse recovery time of 75 nanoseconds ensuring fast switching.
- Operates in temperature range from -65°C to 175°C.
- Through hole mount type with 2 pins for easy PCB integration.
- Compact dimensions of 9.5 mm length, 5.3 mm diameter, and 9.5 mm height.
- No automotive or additional standards approvals specified.
Product Description
onsemi MUR460G Silicon Junction Switching Diode features a single diode configuration tailored for discrete semiconductor applications in electronic and industrial equipment. It supports a maximum forward current of 4 amperes and can withstand a maximum peak reverse repetitive voltage of 600 volts, making it suitable for power rectification and switching tasks.
This diode comes in a DO-201AD package and utilizes through-hole mounting with a 2-pin configuration, facilitating robust mechanical and electrical connections in printed circuit boards.
It possesses a peak reverse recovery time (trr) of 75 nanoseconds, enabling efficient high-speed switching performance in power management circuits.
The diode operates reliably in a wide temperature range from -65°C to 175°C, making it well suited for demanding environments including industrial, manufacturing, and electrical power applications.
Physical dimensions are precise, measuring 9.5 mm in length and height, with a diameter and width of 5.3 mm, ensuring compact integration into diverse system designs. Single silicon junction diode configuration with a DO-201AD package.
Maximum forward current of 4 amperes and peak surge current of 110 amperes. Maximum reverse repetitive voltage rating of 600 volts. Peak reverse recovery time of 75 nanoseconds ensuring fast switching. Operates in temperature range from -65°C to 175°C.
Through hole mount type with 2 pins for easy PCB integration. Compact dimensions of 9.5 mm length, 5.3 mm diameter, and 9.5 mm height. No automotive or additional standards approvals specified. This diode is widely used in industrial electronics, power supplies, and semiconductor switching circuits requiring reliable rectification and fast switching capabilities.
Explore the Electronics & Electricals category at EnvMart to find more on Semiconductor devices and switching diodes compatible with your electronic and industrial needs.
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Frequently Asked Questions
The MUR460G diode has a maximum forward current rating of 4 amperes.
This model features a peak reverse recovery time of 75 nanoseconds, enabling fast switching performance.
The maximum reverse repetitive voltage rating for the MUR460G is 600 volts.
The diode measures 9.5 mm in length and height, with a diameter of 5.3 mm.
It utilizes a through-hole mounting type with a 2-pin configuration for easy integration into PCBs.
This diode operates reliably within a temperature range of -65°C to 175°C.
The peak non-repetitive forward surge current rating for this diode is 110 amperes.
It comes in a DO-201AD package type, suitable for discrete semiconductor applications.
The minimum operating temperature for the MUR460G is -65°C.
This diode is suitable for power rectification and switching tasks in industrial electronics and power supplies.
The maximum forward voltage drop for this diode is 1.28 volts.
The MUR460G features a single diode configuration, designed for discrete semiconductor applications.
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