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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 11.04mm |
| Length | 7.8mm |
| Model | MJE253G |
| Width | 3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-225 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | -4A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 10MHz |
onsemi MJE253G is a general-purpose PNP transistor designed for applications requiring a maximum DC collector current of 4 A and a collector emitter voltage of 100 V. The transistor is housed in a TO-225 package with a 3-pin configuration suitable for through-hole mounting. It is built to deliver reliable operation with a maximum power dissipation of 15 W.
This transistor features a single transistor configuration with PNP polarity and a minimum DC current gain (hFE) of 40, enabling effective amplification in electronic circuits. It operates efficiently over a wide temperature range from -65°C to 150°C, making it suitable for demanding industrial and electronic component applications.
The device supports a maximum transition frequency of 10 MHz, which allows use in various switching and amplification tasks. With compact physical dimensions of 11.04 mm height, 7.8 mm length, and 3 mm width, it fits well into space-constrained PCB layouts.
While this product does not carry automotive-grade approvals, it is ideal for power electronics, industrial devices, and general electronic equipment. The MJE253G transistor offers robust voltage ratings: up to 100 V between collector and base, and 7 V between emitter and base, supporting diverse circuit designs.
Single PNP transistor suitable for general purpose amplification and switching. Maximum collector current of 4 A supports medium power circuits. 100 V collector emitter voltage rating enables use in high voltage applications.
TO-225 package with 3 pins for through-hole mounting compatibility. Operates reliably over a wide temperature range (-65°C to 150°C). Max power dissipation of 15 W ensures stable thermal performance. Compact size and moderate transition frequency of 10 MHz for versatile use.
No automotive standard certification; for industrial and general electronic use.
This onsemi transistor aligns with Semiconductor product requirements for electronics manufacturers and designers. It is commonly used in power supply circuits, switching regulators, and amplification stages in industrial and consumer electronic systems.
Explore our comprehensive range of Bipolar Transistors from leading brands to match your precise application needs with quality assurance and consistent performance.
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