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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 8.51mm |
| Length | 38.86mm |
| Model | MJ11032G |
| Mount Type | Through Hole |
| Series | MJ11032 |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-204 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 120V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 400 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 120V |
| Maximum Power Dissipation Pd | 300W |
| onsemi 1 Darlington Transistor NPN, 50 A 120 V HFE | 400, 2-Pin TO-204 |
onsemi MJ11032G Darlington Transistor is a high-power NPN device designed to handle maximum continuous collector current of 50 A and a collector-emitter voltage rating of 120 V. It is housed in a TO-204 package optimized for through-hole mounting applications.
This transistor exhibits a minimum DC current gain of 400, enabling reliable signal amplification in industrial and electronic equipment. With a power dissipation capacity up to 300 W, it is suited for demanding power switching and amplification tasks.
Its operating temperature range from -55°C to 200°C provides wide thermal tolerance for harsh environments, making it ideal for industrial, manufacturing, and power control systems.
The NPN polarity combined with a low collector-emitter saturation voltage of 2.5 V contributes to efficient conduction and switching performance.
The package dimensions, including an 8.51 mm height and 38.86 mm length, facilitate seamless integration into electronic designs. Its two-pin configuration simplifies circuit board layout and assembly processes.
Though not automotive qualified, this transistor remains a dependable choice for power electronics in laboratory, industrial automation, HVAC controls, and commercial applications.
The transistor features a TO-204 package suitable for through-hole mounting. Offers a minimum DC current gain (hFE) of 400 for reliable amplification. Maximum power dissipation rated at 300 W ensures robust operation. Designed for operation within a temperature range from -55°C to 200°C.
Its two-pin design simplifies circuit integration and mounting. The NPN transistor polarity supports typical switching and amplification applications. Maximum collector saturation voltage is 2.5 V for efficient conduction.
Provides a maximum emitter-base voltage of 5 V and collector-base voltage of 120 V. Height dimension of 8.51 mm and length of 38.86 mm accommodate standard electronic assembly. Reliable component without specific automotive qualification but supports robust industrial use.
Explore additional onsemi components and Darlington Transistors at EnvMart for your electronic design and power management needs.
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