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Nexperia Bipolar Transistor 100 mA NPN 300 V 3-Pin TO-236 PMBTA42,235

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMBTA42,235
Width 1.4mm
Mount Type Surface
Series PMBTA42
Maximum Operating Temperature 150°C
Package Type TO-236
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
onsemi MMBTA42LT1G Transistor, 500 mA NPN, 300 V, 3-Pin SOT-23Brand onsemi

Key Features

  • The transistor supports a maximum collector current of 100 mA.
  • It can withstand a maximum collector emitter voltage of 300 V and collector base voltage of 300 V.
  • The maximum power dissipation is 250 mW ensuring reliable performance in low power applications.
  • The device is configured as a single NPN transistor with a minimum current gain (hFE) of 25.
  • This TO-236 package transistor has compact dimensions with length 3 mm, width 1.4 mm, and height 1.1 mm.
  • Maximum emitter base voltage is 6 V, and the transistor can operate up to 150°C.
  • The transistor is designed for surface mounting and is ideal for general purpose amplification and switching applications.

Product Description

Nexperia PMBTA42,235 is a high voltage NPN bipolar transistor designed for low current applications. With a maximum collector current of 100 mA and collector emitter voltage rating of 300 V, it is suitable for electronic circuits requiring reliable small signal amplification and switching at moderate voltages.

The transistor comes in a compact 3-pin TO-236 surface mount package, offering easy PCB assembly and space-saving benefits. Its minimum DC current gain of 25 ensures stable transistor operation in switching and amplification circuits.

This device supports a maximum power dissipation of 250 mW and can operate reliably at temperatures up to 150°C, making it suitable for industrial, consumer electronics, and communication equipment field applications.

Key electrical parameters include a maximum collector base voltage of 300 V and maximum emitter base voltage of 6 V, providing ample voltage margin for many signal-processing designs. The 3-pin configuration allows flexible circuit integration as a discrete transistor element.

The PMBTA42 series by Nexperia is known for quality and consistency in bipolar transistor applications and widely used in electronic components manufacturing, laboratory testing, industrial control, and power supply regulation.

The transistor supports a maximum collector current of 100 mA. It can withstand a maximum collector emitter voltage of 300 V and collector base voltage of 300 V. The maximum power dissipation is 250 mW ensuring reliable performance in low power applications.

The device is configured as a single NPN transistor with a minimum current gain (hFE) of 25. This TO-236 package transistor has compact dimensions with length 3 mm, width 1.4 mm, and height 1.1 mm. Maximum emitter base voltage is 6 V, and the transistor can operate up to 150°C.

The transistor is designed for surface mounting and is ideal for general purpose amplification and switching applications. Explore more semiconductor components and Bipolar Transistors on EnvMart for your electronic and industrial projects.

Nexperia Bipolar Transistor 100 mA NPN 300 V 3-Pin TO-236 PMBTA42,235
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Frequently Asked Questions

The maximum collector current for this model is 100 mA.

It can withstand a maximum collector emitter voltage of 300 V.

The maximum power dissipation is 250 mW.

The minimum DC current gain (hFE) is 25.

The dimensions of the TO-236 package are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

This model can operate reliably at temperatures up to 150°C.

It is designed for surface mounting.

The maximum emitter base voltage is 6 V.

It is suitable for general purpose amplification and switching applications.

This transistor has a 3-pin configuration.

The maximum collector base voltage is also rated at 300 V.

The device is configured as a single NPN transistor.

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