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ROHM Power MOSFET N-Channel 2 A 60 V Enhancement Mode 3-Pin SOT-89 Package RHP020N06T100

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ROHM Power MOSFET N-Channel 2 A 60 V Enhancement Mode 3-Pin SOT-89 Package RHP020N06T100

Name: ROHM Power MOSFET N-Channel 2 A 60 V Enhancement Mode 3-Pin SOT-89 Package RHP020N06T100
Brand: ROHM
SKU: 227092
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	1.6mm
Length	4.7mm
Model	RHP020N06T100
Width	2.7mm
Mount Type	Surface
Series	RHP020N06
Maximum Operating Temperature	150°C
Package Type	SOT-89
Minimum Operating Temperature	-55°C
Digital Multimeter	Handy Type
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	2A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	340mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	14nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V
Motor Control	Brushless DC

Key Features

Features an enhancement mode N-channel for efficient switching.
Compact 3-pin SOT-89 surface mount package.
Maximum power dissipation of 500 milliwatts for reliable operation.
Fast switching speed suitable for motor control and portable device applications.
Wide operating temperature range from -55°C to 150°C ensures durability.
Low drain-source resistance of 340 milliohms reduces power loss.
Maximum gate-source voltage rating of 20 volts for robust control.
Applications include motor control, digital multimeters, embedded PCs, and solar power inverters.

Product Description

ROHM RHP020N06T100 is a power MOSFET designed as an N-channel enhancement mode device capable of handling a maximum continuous drain current of 2 Amperes and a drain-source voltage up to 60 Volts. It is housed in a small footprint 3-pin SOT-89 surface mount package, making it ideal for compact electronic designs requiring efficient switching and low power loss.

The MOSFET features a low maximum drain-source resistance of 340 milliohms which contributes to high efficiency in various industrial and consumer applications. It supports fast switching speeds and has a maximum power dissipation rating of 500 milliwatts, enabling stable performance under demanding electrical conditions.

This device operates reliably over a broad temperature range, from minus 55 degrees Celsius to 150 degrees Celsius, ensuring robust performance in harsh environments. The typical gate charge of 14 nanocoulombs at rated gate voltage allows for fast and effective control of switching behavior.

ROHM's RHP020N06T100 MOSFET finds wide applications, including brushless DC motor control, stepper motor systems, portable data terminals, digital multimeters, embedded computing platforms, surveillance equipment, and solar power inverters. Its small size and surface-mount configuration suit modern compact electronics manufacturing.

Enhancement mode N-channel MOSFET with 2 A drain current capacity. 3-pin SOT-89 package for surface mounting conditions. Voltage rating of 60 V and maximum gate-source voltage of 20 V. Low on-resistance ensures energy-efficient switching.

Wide temperature tolerance ranging from -55°C to +150°C. Typical gate charge of 14 nC supports fast switching. Applications in industrial, automotive, and consumer electronic devices. Lead-free, RoHS-compliant construction.

Choose ROHM RHP020N06T100 for reliable power management solutions in a compact, surface mount package. Explore more power MOSFETs and semiconductor components on EnvMart for your industrial and laboratory needs.