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Taiwan Semiconductor Silicon Junction Switching Diode, Single, 1 A Forward Current, 600 V Reverse Voltage ES1JL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 1.43mm |
| Length | 2.9mm |
| Model | ES1JL |
| Width | 1.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | Sub SMA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.7V |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V |
Key Features
- The diode features a 2-pin Sub SMA surface mount package.
- Maximum forward voltage is 1.7 V ensuring efficient conduction.
- It supports peak non-repetitive forward surge current of 30 A.
- Operating temperature ranges from -55°C to 150°C for reliable performance.
- The peak reverse recovery time is fast at 35 ns, suitable for switching applications.
- Compact dimensions of 2.9 mm length, 1.9 mm width, and 1.43 mm height.
- Designed for surface mounting, facilitating automated assembly.
Product Description
Taiwan Semiconductor ES1JL Silicon Junction Switching Diode is designed for efficient switching and rectification in electronic circuits with a maximum forward current rating of 1 A and maximum reverse repetitive voltage of 600 V.
This diode features a compact Sub SMA surface mount package with 2 pins, making it suitable for space-constrained PCB layouts and automated manufacturing processes.
It offers a maximum forward voltage of 1.7 V and can withstand peak non-repetitive forward surge current up to 30 A, providing durability under transient conditions. The diode operates reliably within a temperature range from -55°C to 150°C, making it suitable for demanding industrial and commercial applications.
The fast peak reverse recovery time of 35 nanoseconds ensures excellent switching performance with minimal losses, which is critical in power management, communication devices, and other high-frequency systems.
Its small physical footprint with dimensions of 2.9 mm length, 1.9 mm width, and 1.43 mm height ensures ease of integration in compact electronic assemblies. The diode features a 2-pin Sub SMA surface mount package. Maximum forward voltage is 1.7 V ensuring efficient conduction.
It supports peak non-repetitive forward surge current of 30 A. Operating temperature ranges from -55°C to 150°C for reliable performance. The peak reverse recovery time is fast at 35 ns, suitable for switching applications.
Compact dimensions of 2.9 mm length, 1.9 mm width, and 1.43 mm height. Designed for surface mounting, facilitating automated assembly.
This silicon junction diode is ideal for use in electronic components, power management, semiconductor switching, and embedded systems in industrial, communication, and consumer electronics sectors.
Explore our Electronics & Electricals category for more silicon junction diodes and semiconductor components at EnvMart.
Explore more products in our Semiconductor Diodes category.
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Frequently Asked Questions
The maximum forward current rating of the ES1JL diode is 1 A.
The peak reverse recovery time for this model is 35 nanoseconds.
This diode can withstand a maximum reverse repetitive voltage of 600 V.
The operating temperature range for the ES1JL diode is from -55°C to 150°C.
The dimensions of this diode are 2.9 mm in length, 1.9 mm in width, and 1.43 mm in height.
It uses a Sub SMA surface mount package with 2 pins.
The maximum forward voltage of this diode is 1.7 V.
The peak non-repetitive forward surge current rating is 30 A.
This diode is suitable for power management, semiconductor switching, and embedded systems in industrial, communication, and consumer electronics sectors.
With a fast peak reverse recovery time of 35 ns, it ensures excellent switching performance with minimal losses, making it suitable for high-frequency applications.
The ES1JL diode has a pin count of 2.
This model features a single diode configuration.
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