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| Country of Origin | India |
|---|---|
| Diameter | 3.56mm |
| Brand | STMicroelectronics |
| Height | 21.46mm |
| Length | 16.26mm |
| Model | STPSC10H12WL |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 10A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 400μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A |
| Maximum Forward Voltage Vf | 2.25V |
STMicroelectronics STPSC10H12WL is a high-performance Schottky diode designed for industrial and electronic applications requiring efficient power rectification. This through hole diode is housed in a 2-pin DO-247 package providing robust mechanical stability and thermal dissipation.
The diode features a silicon carbide substrate, enabling a wide band-gap material that supports a 1200 V reverse voltage and a maximum continuous forward current of 10 A with a maximum forward voltage of 2.25 V. Its construction yields minimal or no recovery at turn-off, making it ideal for use in power factor correction (PFC) and secondary side applications in power electronics.
Capable of withstanding transient conditions with a peak forward surge current of 420 A, this diode ensures excellent robustness during operation. It operates across an extended temperature range from -40 °C to 175 °C, suitable for demanding industrial environments.
The compact dimensions (16.26 mm length, 5.31 mm width, 21.46 mm height, and 3.56 mm diameter) and through-hole mounting style facilitate easy integration into power assemblies and electronic circuits.
Key features include negligible reverse recovery current, temperature-independent switching behavior, and a robust high voltage periphery, making the STPSC10H12WL an efficient component for power conversion, automotive electronics, and industrial control systems.
Low forward voltage drop enhancing efficiency in power circuits. High surge current capability provides transient robustness. Wide temperature operating range permits versatile use. Silicon carbide substrate for enhanced performance under hard switching.
Through hole mounting in DO-247 package for thermal management. Suitable for power factor correction and secondary side rectification applications. Compact form factor with precise package dimensions. Select STMicroelectronics Schottky diodes at EnvMart for high-reliability semiconductor components optimized for industrial, automotive, and power electronics applications.
Explore more products in our Semiconductor Diode category.
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