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STMicroelectronics 1200 V 10 A Schottky Diode Through Hole 2-Pin DO-247 STPSC10H12WL

Category Semiconductor Diode Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Diameter 3.56mm
Brand STMicroelectronics
Height 21.46mm
Length 16.26mm
Model STPSC10H12WL
Width 5.31mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type DO-247
Minimum Operating Temperature -40°C
Pin Count 2
Maximum Continuous Forward Current If 10A
Peak Reverse Repetitive Voltage Vrrm 1200V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 400μA
Peak Non-Repetitive Forward Surge Current Ifsm 420A
Maximum Forward Voltage Vf 2.25V

Key Features

  • This diode features an ultra-low forward voltage drop of 2.25 V for efficient conduction.
  • It supports a maximum continuous forward current of 10 A and peak non-repetitive surge current of 420 A.
  • The diode operates reliably across a wide temperature range from -40°C to 175°C.
  • The 1200 V peak reverse repetitive voltage rating ensures robust high-voltage operation.
  • Package dimensions include length 16.26 mm, width 5.31 mm, height 21.46 mm, and diameter 3.56 mm.
  • The device offers negligible reverse recovery current, enabling fast switching applications.
  • It is designed with a silicon carbide substrate, improving efficiency in hard switching and power factor correction circuits.
  • The diode's through hole mounting in a DO-247 package ensures durability and thermal management.

Product Description

STMicroelectronics STPSC10H12WL is a high-performance Schottky diode designed for industrial and electronic applications requiring efficient power rectification. This through hole diode is housed in a 2-pin DO-247 package providing robust mechanical stability and thermal dissipation.

The diode features a silicon carbide substrate, enabling a wide band-gap material that supports a 1200 V reverse voltage and a maximum continuous forward current of 10 A with a maximum forward voltage of 2.25 V. Its construction yields minimal or no recovery at turn-off, making it ideal for use in power factor correction (PFC) and secondary side applications in power electronics.

Capable of withstanding transient conditions with a peak forward surge current of 420 A, this diode ensures excellent robustness during operation. It operates across an extended temperature range from -40 °C to 175 °C, suitable for demanding industrial environments.

The compact dimensions (16.26 mm length, 5.31 mm width, 21.46 mm height, and 3.56 mm diameter) and through-hole mounting style facilitate easy integration into power assemblies and electronic circuits.

Key features include negligible reverse recovery current, temperature-independent switching behavior, and a robust high voltage periphery, making the STPSC10H12WL an efficient component for power conversion, automotive electronics, and industrial control systems.

Low forward voltage drop enhancing efficiency in power circuits. High surge current capability provides transient robustness. Wide temperature operating range permits versatile use. Silicon carbide substrate for enhanced performance under hard switching.

Through hole mounting in DO-247 package for thermal management. Suitable for power factor correction and secondary side rectification applications. Compact form factor with precise package dimensions. Select STMicroelectronics Schottky diodes at EnvMart for high-reliability semiconductor components optimized for industrial, automotive, and power electronics applications.

Explore more products in our Semiconductor Diode category.

STMicroelectronics 1200 V 10 A Schottky Diode Through Hole 2-Pin DO-247 STPSC10H12WL
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Frequently Asked Questions

The maximum continuous forward current for this diode is 10 A.

The peak reverse repetitive voltage rating is 1200 V.

The dimensions of the DO-247 package are 16.26 mm in length, 5.31 mm in width, and 21.46 mm in height, with a diameter of 3.56 mm.

The maximum forward voltage drop is 2.25 V.

This diode operates reliably across a temperature range from -40°C to 175°C.

This diode uses a through hole mounting type in a DO-247 package.

The peak non-repetitive forward surge current rating is 420 A.

The diode features negligible reverse recovery current, enabling fast switching applications.

The diode is designed with a silicon carbide substrate, which enhances its efficiency in hard switching applications.

This model has a single diode configuration.

This Schottky diode is suitable for power factor correction and secondary side rectification applications in power electronics.

The peak reverse current is specified at 400 μA.

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