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Nexperia Small Signal NPN Transistor 600 mA, 40 V, 3-Pin SOT-23 Package MMBT2222A,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model MMBT2222A,215
Width 2.5mm
Mount Type Surface
Series MMBT2222A
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
onsemi Transistor, 600 mA NPN, 30 V, 3-Pin SOT-23Brand onsemi

Key Features

  • This transistor features a maximum power dissipation of 250 mW suitable for low power applications.
  • It is designed with surface mount technology for easy PCB integration.
  • The device operates from a minimum temperature of -65°C up to a maximum of 150°C.
  • It provides a minimum DC current gain (hFE) of 35 for effective signal amplification.
  • The transistor has a compact dimension of 3 mm length, 2.5 mm width, and 1.1 mm height.
  • Automotive standard compliant with AEC-Q101 ensuring reliability in automotive applications.
  • The device supports a maximum collector base voltage of 75 V and emitter base voltage of 6 V.

Product Description

Nexperia MMBT2222A,215 is a high-quality small signal NPN transistor designed to handle a maximum DC collector current of 600 mA and a collector-emitter voltage of 40 V. Packaged in a compact 3-pin SOT-23 surface mount package, it is ideal for modern electronics requiring durable and reliable bipolar transistors.

This transistor supports a maximum power dissipation of 250 mW, supporting low power usage scenarios typical in consumer electronics, industrial instrumentation, and automotive electronics. Its minimum DC current gain (hFE) of 35 enables efficient gain characteristics for switching and amplification tasks.

The device’s operating temperature range from -65°C to 150°C makes it suitable for harsh environments, including automotive and industrial applications. Its compliance with the automotive standard AEC-Q101 ensures the transistor meets stringent automotive quality and performance standards.

Its compact physical dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height facilitate integration into densely packed printed circuit boards. The surface mount design simplifies automated assembly processes, making it suitable for high-volume manufacturing.

Maximum DC Collector Current: 600 mA. Maximum Collector Emitter Voltage: 40 V. Maximum Power Dissipation: 250 mW. Package Type: 3-Pin SOT-23 Surface Mount. Operating Temperature Range: -65°C to 150°C. Minimum DC Current Gain (hFE): 35.

Automotive Standard: AEC-Q101 Compliant.

This transistor finds usage in electronic circuits requiring reliable switching and amplification, including industrial, automotive, communication, and consumer electronics. Its performance and packaging make it an essential component for prototyping and production of modern electronic devices.

Explore the Electronics & Electricals category at EnvMart for a comprehensive range of Bipolar Transistors and semiconductor devices designed to meet various application needs.

Nexperia Small Signal NPN Transistor 600 mA, 40 V, 3-Pin SOT-23 Package MMBT2222A,215
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Frequently Asked Questions

The maximum DC collector current for this transistor is 600 mA.

This model operates within a temperature range of -65°C to 150°C.

The maximum collector-emitter voltage for this transistor is 40 V.

It comes in a 3-pin SOT-23 surface mount package.

The minimum DC current gain (hFE) is 35.

The maximum power dissipation is 250 mW.

Yes, it is compliant with the automotive standard AEC-Q101.

The maximum collector-base voltage is 75 V.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It is a small signal NPN transistor.

The maximum emitter-base voltage is 6 V.

This transistor features a surface mount design.

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