ROHM N-Channel MOSFET 39 A 100 V Enhancement Mode 8-Pin HSMT Surface Mount RQ3P300BHTB1

ROHM RQ3P300BHTB1 is an N-channel power MOSFET designed for switching and power management applications requiring high current and voltage handling capability. This device supports a maximum continuous drain current of 39 amperes and can withstand drain-source voltages up to 100 volts, making it suitable for industrial and commercial electronic circuits.

The MOSFET features an enhancement channel mode with low on-state resistance of 15.5 milliohms, ensuring lower conduction losses and improved efficiency. Packaged in a compact 8-pin HSMT surface-mount package, the device optimizes PCB space without compromising thermal performance thanks to its 2 watt maximum power dissipation rating.

Operating across a broad temperature range from -55°C to 150°C, the RQ3P300BHTB1 MOSFET is well-matched for use in industrial automation, power supplies, and electronic control systems. Its typical gate charge of 36 nanocoulombs enables fast switching times, beneficial for high-frequency power electronics.

The device is constructed with Pb-free lead plating, complying with RoHS environmental standards. The maximum gate-source voltage is limited to 20 volts to ensure reliability and device integrity under normal operating conditions. Physical dimensions include a length of 3.15 mm, width of 0.85 mm, and height of 3.4 mm, supporting compact and dense PCB layouts.

This MOSFET is ideal for industrial power electronics, laboratory circuits, telecommunications equipment, and commercial electronics requiring efficient and reliable switching components. It enhances overall circuit performance by reducing thermal losses and improving switching efficiency.

Package includes one ROHM RQ3P300BHTB1 N-channel power MOSFET in 8-pin HSMT configuration suitable for surface mounting. Explore more semiconductor solutions from ROHM and similar MOSFET products on EnvMart for your advanced electronic design requirements.

Supports a maximum continuous drain current of 39 amps for high-power applications. Operates at a maximum drain-source voltage of 100 volts ensuring durability under stress. Features a low on-resistance of 15.5 milliohms minimizing power loss during conduction.

Enables enhancement mode operation for efficient voltage control. Compact HSMT package with 8 pins for space-saving surface mounting. Maximum power dissipation rating of 2 watts to handle thermal loads effectively. Wide operating temperature range from -55°C to 150°C suitable for harsh environments.

Typical gate charge of 36 nanocoulombs for fast switching performance. Maximum gate-source voltage rating of 20 volts for device protection. Physical dimensions: length 3.15 mm, width 0.85 mm, height 3.4 mm fitting compact PCB layouts.

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