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ROHM N-Channel MOSFET 10 A 1200 V Enhancement 3-Pin TO-247N SCT2450KEGC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | SCT2450KEGC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 4.3V |
Key Features
- The MOSFET features a maximum continuous drain current of 10 Amperes.
- It supports a maximum drain-source voltage of 1200 Volts, suitable for high voltage applications.
- The device comes in a through-hole mount type with a TO-247N package.
- Typical gate charge at Vgs is 27 nano-Coulombs for fast switching.
- Maximum power dissipation of 85 Watts enables efficient thermal management.
- Operating temperatures range from -55°C to 150°C, ensuring durability under varied conditions.
- Low on-state resistance of 450 milliohms provides efficient conduction.
- Designed with an enhancement channel mode for improved performance.
Product Description
ROHM SCT2450KEGC11 N-Channel MOSFET is a high-voltage semiconductor device designed for industrial and power electronics applications. It is fabricated in a TO-247N 3-pin package and is ideal for use in solar inverters, DC/DC converters, induction heating, and motor drive circuits. This enhancement mode MOSFET offers excellent switching speed and low on-state resistance, making it suitable for efficient power management in demanding environments.
The device supports a continuous drain current of up to 10 Amperes and can withstand drain-source voltages as high as 1200 Volts. It features a maximum power dissipation rating of 85 Watts, facilitating reliable thermal handling during operation. The typical gate charge of 27 nano-Coulombs at Vgs ensures fast switching response, while the maximum gate-source voltage of 22 Volts provides operational safety margins.
Operating temperature range from -55°C to 150°C allows the MOSFET to perform in extreme environments, making it suitable for industrial, manufacturing, and HVAC applications. The low forward voltage of 4.3 Volts and low drain-source resistance aid in reducing energy losses and increasing overall system efficiency.
The SCT2450KEGC11 is lead-free with Pb-free lead plating and complies with RoHS standards. It supports easy paralleling, fast reverse recovery, and is simple to drive, which enhances its integration into complex circuits.
The MOSFET comes packaged ready for insertion into machinery, improving production efficiency. Low on-state resistance reduces power dissipation in conduction mode. Fast switching characteristics support high-frequency applications.
Lead-free plating ensures environmental compliance. Suitable for solar inverters, DC/DC converters, induction heating, and motor drives. High maximum operating temperature ensures reliability under thermal stress.
This product is a reliable choice for electrical and industrial applications requiring robust semiconductor devices. Explore more components in the MOSFET category to find complementary parts for your projects and systems.
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Frequently Asked Questions
The maximum continuous drain current of the SCT2450KEGC11 is 10 Amperes.
It supports a maximum drain-source voltage of 1200 Volts, making it suitable for high voltage applications.
This MOSFET comes in a TO-247N package, designed for through-hole mounting.
The operating temperature range is from -55°C to 150°C, allowing it to function in extreme environments.
The typical gate charge at Vgs is 27 nano-Coulombs, which enables fast switching response.
It has a maximum power dissipation rating of 85 Watts, facilitating efficient thermal management during operation.
The low on-state resistance is 450 milliohms, which aids in efficient conduction.
The maximum gate-source voltage is 22 Volts, providing operational safety margins.
It is ideal for use in solar inverters, DC/DC converters, induction heating, and motor drive circuits.
This model features a pin count of 3, suitable for its TO-247N package.
The SCT2450KEGC11 is an N-channel MOSFET, designed for enhancement mode operation.
Yes, it is lead-free with Pb-free lead plating and complies with RoHS standards.
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