ROHM N-Channel Enhancement MOSFET, 22 A Continuous Drain Current, 1200 V Drain Source Voltage, 165W Power SCT2160KEGC11

ROHM SCT2160KEGC11 is an N-Channel MOSFET that excels in high-voltage and high-current applications, making it well suited for use in solar inverters, DC/DC converters, induction heating systems, and motor drives within industrial, commercial, and manufacturing environments.

The MOSFET features a robust 3-pin TO-247N package designed for through-hole mounting, facilitating easy integration into various PCB designs. With a maximum continuous drain current of 22A and a drain-source voltage rating of 1200V, it ensures high-efficiency operation under demanding electrical conditions.

It boasts a low on-resistance of 160mΩ, reducing conduction losses and improving overall system efficiency. Its fast switching speed coupled with a typical gate charge of 62nC enables rapid operation in switching applications. The device is designed to operate safely from -55°C up to 150°C ambient temperatures, extending reliability over a wide range of environments.

ROHM’s SCT2160KEGC11 supports easy paralleling and simple drive requirements, which are advantageous in scalable power electronic circuits. The MOSFET uses Pb-free lead plating and complies with RoHS standards, supporting environmentally friendly manufacturing processes.

Enables efficient power management in solar energy, DC/DC conversion, and motor control industrial applications. Designed for high power dissipation of up to 165 watts ensuring robust thermal performance. Supports industrial and laboratory usage due to its wide operating temperature range.

RoHS compliant materials and Pb-free plating minimize environmental impact. This MOSFET is an excellent choice for engineers and professionals requiring reliable and efficient semiconductor devices for power switching and amplification.

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