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ROHM N-Channel MOSFET, 11 A Continuous Drain Current, 650 V Drain Source Voltage, Enhancement Mode, TO-252 R6511END3TL1

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ROHM N-Channel MOSFET, 11 A Continuous Drain Current, 650 V Drain Source Voltage, Enhancement Mode, TO-252 R6511END3TL1

Name: ROHM N-Channel MOSFET, 11 A Continuous Drain Current, 650 V Drain Source Voltage, Enhancement Mode, TO-252 R6511END3TL1
Brand: ROHM
SKU: 219491
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	10.4mm
Length	6.4mm
Model	R6511END3TL1
Width	2.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	11A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	400mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	125W
Typical Gate Charge Qg @ Vgs	32nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This MOSFET is in a compact TO-252 surface-mount package with 3 pins.
It features enhancement mode operation ideal for switching and amplification applications.
Maximum power dissipation is rated at 125 watts for robust performance.
Gate charge is typically 32nC at a gate-source voltage of 20V, enabling fast switching.
Supports operation over a wide temperature range from -55°C to 150°C.
Low on-resistance of 400 milliohms reduces power loss and improves efficiency.
Designed for low noise performance, suitable for audio and lighting equipment.
Lead-free plating and RoHS compliant for environmental safety.

Product Description

ROHM R6511END3TL1 N-Channel MOSFET is a discrete semiconductor device engineered for power switching and amplification. Its enhancement-mode channel type and high continuous drain current of 11A with a drain-source voltage rating of 650V make it suitable for demanding electronic circuits. Packaged in a TO-252 surface mount configuration with 3 pins, it supports easy PCB integration in compact designs.

The MOSFET features a low drain-source resistance of 400 milliohms, minimizing conduction losses and enabling efficient power handling. Rapid switching is facilitated by a typical gate charge of 32nC at 20V, supporting high-frequency applications. Its maximum power dissipation of 125 watts ensures reliable performance under load conditions.

Designed to operate reliably between -55°C to 150°C, it accommodates varied industrial, audio, and lighting electronics environments. ROHM's focus on reducing noise lends this device excellent performance in sensitive signal applications. The component also complies with RoHS standards and employs Pb-free plating, aligning with environmental regulations.

This MOSFET is in a compact TO-252 surface-mount package with 3 pins. It features enhancement mode operation ideal for switching and amplification applications. Maximum power dissipation is rated at 125 watts for robust performance.

Gate charge is typically 32nC at a gate-source voltage of 20V, enabling fast switching. Supports operation over a wide temperature range from -55°C to 150°C. Low on-resistance of 400 milliohms reduces power loss and improves efficiency.

Designed for low noise performance, suitable for audio and lighting equipment. Lead-free plating and RoHS compliant for environmental safety.

This product is ideal for use in industrial electronics, audio equipment, lighting controls, and other power management applications requiring efficient and low-noise MOSFET solutions.

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