ROHM N-Channel MOSFET, 11 A Continuous Drain Current, 650 V Drain Source Voltage, Enhancement Mode, TO-252 R6511END3TL1

ROHM R6511END3TL1 N-Channel MOSFET is a discrete semiconductor device engineered for power switching and amplification. Its enhancement-mode channel type and high continuous drain current of 11A with a drain-source voltage rating of 650V make it suitable for demanding electronic circuits. Packaged in a TO-252 surface mount configuration with 3 pins, it supports easy PCB integration in compact designs.

The MOSFET features a low drain-source resistance of 400 milliohms, minimizing conduction losses and enabling efficient power handling. Rapid switching is facilitated by a typical gate charge of 32nC at 20V, supporting high-frequency applications. Its maximum power dissipation of 125 watts ensures reliable performance under load conditions.

Designed to operate reliably between -55°C to 150°C, it accommodates varied industrial, audio, and lighting electronics environments. ROHM's focus on reducing noise lends this device excellent performance in sensitive signal applications. The component also complies with RoHS standards and employs Pb-free plating, aligning with environmental regulations.

This MOSFET is in a compact TO-252 surface-mount package with 3 pins. It features enhancement mode operation ideal for switching and amplification applications. Maximum power dissipation is rated at 125 watts for robust performance.

Gate charge is typically 32nC at a gate-source voltage of 20V, enabling fast switching. Supports operation over a wide temperature range from -55°C to 150°C. Low on-resistance of 400 milliohms reduces power loss and improves efficiency.

Designed for low noise performance, suitable for audio and lighting equipment. Lead-free plating and RoHS compliant for environmental safety.

This product is ideal for use in industrial electronics, audio equipment, lighting controls, and other power management applications requiring efficient and low-noise MOSFET solutions.

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