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ROHM N-Channel MOSFET, 4 A, 650 V Enhancement Mode, Surface Mount TO-252 Package R6504END3TL1
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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 10.4mm |
| Length | 6.4mm |
| Model | R6504END3TL1 |
| Width | 2.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 1.05Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 58W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
The ROHM R6504END3TL1 is a high-quality N-Channel MOSFET transistor designed for efficient switching and low noise in industrial and commercial electronic circuits. Featuring an enhancement mode channel, it allows for precise control of current flow, making it ideal for noise-sensitive applications such as audio processing equipment and advanced lighting controls.
Housed in a compact TO-252 package, this surface mount device supports a maximum continuous drain current of 4 amperes and withstands voltages up to 650 volts, ensuring robust operation in demanding environments. The device offers a low on-resistance of 1.05 ohms, contributing to minimal power loss and improved thermal management.
With a typical gate charge of 15 nanocoulombs at 15 volts gate-source voltage, the R6504END3TL1 guarantees fast switching speeds suitable for high-frequency circuits. The transistor’s maximum power dissipation rating of 58 watts ensures it can handle substantial loads without degradation, supported by a broad operating temperature range from -55°C to 150°C.
Additional features include Pb-free plating and RoHS compliance, emphasizing environmental considerations. This MOSFET series is optimized for ease of parallel use, enabling scalable power solutions in manufacturing, industrial automation, HVAC control systems, and water treatment equipment.
Maximum continuous drain current of 4 A supports moderate power applications. 650 V maximum drain-source voltage ensures high voltage tolerance. Low drain-source resistance reduces power consumption in circuits. Fast switching speed enhances performance in audio and lighting devices.
Wide operating temperature range allows use in varied environmental conditions. Surface mount package TO-252 facilitates automated PCB assembly. Lead-free and environmentally compliant manufacturing aligns with modern standards.
Build quality designed for industrial, laboratory, and commercial electronics uses.
This product is recommended for engineers and technicians designing power-efficient and noise-sensitive systems. Explore the full range of ROHM semiconductors and MOSFET devices on EnvMart to find complementary components for your next project.
Explore more products in our MOSFETs category.
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ROHM N-Channel MOSFET, 4 A, 650 V Enhancement Mode, Surface Mount TO-252 Package R6504END3TL1
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