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STMicroelectronics NPN Darlington Transistor 10 A 100 V TO-220 3-Pin BDX33C

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STMicroelectronics NPN Darlington Transistor 10 A 100 V TO-220 3-Pin BDX33C

Name: STMicroelectronics NPN Darlington Transistor 10 A 100 V TO-220 3-Pin BDX33C
Brand: STMicroelectronics
SKU: 219230
Price: 0.86 USD
Availability: InStock

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Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	9.15mm
Length	10.4mm
Model	BDX33C
Mount Type	Through Hole
Series	BDX33C
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	10A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	750
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2.5V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	0.2mA
Maximum Power Dissipation Pd	70W
STMicroelectronics 1 Darlington Transistor NPN, 10 A 100 V HFE	750, 3-Pin TO-220
Magnatec BDX33C NPN Darlington Transistor, 10 A 100 V HFE	750, 3-Pin TO-220Brand: Magnatec

Key Features

Supports maximum continuous collector current of 10 amperes.
Rated for maximum collector-emitter voltage of 100 volts.
Features 3-pin TO-220 package with through-hole mount type.
Minimum DC current gain (hFE) of 750 ensures strong amplification.
Maximum power dissipation rated at 70 watts for robust performance.
Operates within a temperature range from -65°C to 150°C.
Maximum emitter-base voltage of 5 volts.
Maximum collector-emitter saturation voltage is 2.5 volts.

Product Description

STMicroelectronics BDX33C NPN Darlington Transistor is a high-performance bipolar transistor designed for power amplification and switching in various electronic and industrial applications. It is housed in a durable TO-220 package suitable for through-hole mounting, making it ideal for use in both laboratory and commercial electronic devices.

This transistor supports a maximum continuous collector current of 10 amperes and a maximum collector-emitter voltage of 100 volts, providing reliability in demanding environments. Its minimum DC current gain (hFE) of 750 ensures efficient signal amplification, while its maximum power dissipation of 70 watts provides sufficient thermal handling capacity.

The device operates efficiently across a wide temperature range, from -65°C up to 150°C, making it suitable for harsh industrial conditions. It features a 3-pin configuration and compact dimensions with a height of 9.15 mm and a length of 10.4 mm.

The maximum emitter-base voltage of 5 volts and collector-emitter saturation voltage of 2.5 volts further define its electrical characteristics, contributing to its robust performance in power regulation and switching circuits.

STMicroelectronics' BDX33C transistor is widely used in industrial, laboratory, commercial electronics, and power supply projects. It is an essential component for engineers and technicians who require reliable, high-current, and high-voltage transistor performance.

Supports maximum continuous collector current of 10 amperes. Rated for maximum collector-emitter voltage of 100 volts. Features 3-pin TO-220 package with through-hole mount type. Minimum DC current gain of 750. Maximum power dissipation of 70 watts.

Wide temperature operating range from -65°C to 150°C. Maximum emitter-base voltage of 5 volts. Compact dimensions ensure easy integration. Suitable for power amplification and switching. Reliable for industrial, laboratory, and commercial applications.

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