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STMicroelectronics Darlington Transistor PNP 8A 100V 60W TO-220 3-Pin BDX54C
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | BDX54C |
| Mount Type | Through Hole |
| Series | BDX54C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 60W |
| STMicroelectronics 1 Darlington Transistor PNP, 8 A 100 V HFE | 750, 3-Pin TO-220 |
Key Features
- The transistor has a minimum DC current gain (hFE) of 750.
- It features a maximum power dissipation rating of 60 watts.
- The device operates within a temperature range from -65°C to 150°C.
- It is configured for through-hole mounting with 3 pins in a TO-220 package.
- This transistor is suitable for power amplification applications requiring high gain and current.
- Maximum collector-emitter saturation voltage is rated at 2 volts.
- The maximum emitter-base voltage rating is 5 volts.
- Minimum collector cut-off current is 0.2 mA, ensuring low leakage.
Product Description
STMicroelectronics BDX54C is a PNP Darlington transistor designed for electronic and industrial power amplification purposes. It supports a maximum continuous collector current of 8 amperes and a collector-emitter voltage of 100 volts, making it robust for high power applications.
Housed in a standard TO-220 package, this transistor features through-hole mounting with 3 pins, facilitating easy integration into printed circuit boards.
The device achieves a high minimum DC current gain (hFE) of 750, enabling efficient signal amplification. Its maximum power dissipation of 60 watts allows for reliable performance under demanding electrical loads.
Operating temperature ranges from -65°C to 150°C permit use in harsh industrial environments. The maximum collector-emitter saturation voltage is 2 volts, while the emitter-base voltage maximum rating is 5 volts, ensuring safe operation within specified electrical limits.
With a physical height of 9.15 millimeters and length of 10.4 millimeters, the BDX54C offers compact dimensions suitable for space-constrained designs. The transistor provides high gain and current capacity for power amplification circuits.
Its TO-220 through-hole package supports easy mounting and heat dissipation. The device operates reliably over a wide temperature range appropriate for industrial and commercial electronic equipment. Consistent current gain ensures stable amplification performance.
Suitable for use in electronic control systems, power supplies, and other discrete semiconductor applications. This BDX54C Darlington Transistor is ideal for engineers and technicians seeking a reliable component for power amplification requiring PNP polarity characteristics.
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Frequently Asked Questions
The BDX54C has a maximum continuous collector current of 8 amperes, making it suitable for high power applications.
This model operates within a temperature range from -65°C to 150°C, allowing for use in harsh environments.
It features a maximum power dissipation rating of 60 watts, ensuring reliable performance under demanding electrical loads.
The transistor is housed in a TO-220 package, which supports through-hole mounting with 3 pins.
The BDX54C has a minimum DC current gain (hFE) of 750, enabling efficient signal amplification.
The maximum collector-emitter voltage rating for the BDX54C is 100 volts, ensuring safe operation within specified limits.
The maximum emitter-base voltage rating for this model is 5 volts, which is critical for its safe operation.
The BDX54C has a height of 9.15 millimeters and a length of 10.4 millimeters, making it compact for various applications.
The maximum collector cut-off current for this transistor is 0.2 mA, ensuring low leakage.
It is suitable for power amplification applications requiring high gain and current, such as electronic control systems and power supplies.
The maximum collector-emitter saturation voltage for the BDX54C is rated at 2 volts, which is important for its performance in circuits.
The BDX54C is manufactured in India, reflecting its production source.
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